Nonlinear gain effects due to carrier heating and spectral holeburning in strained-quantum-well lasers

M. Willatzen; T. Takahashi; Y. Arakawa

doi:10.1109/68.145237

Nonlinear gain effects due to carrier heating and spectral holeburning in strained-quantum-well lasers

IEEE Photonics Technology Letters ◽

10.1109/68.145237 ◽

1992 ◽

Vol 4 (7) ◽

pp. 682-685 ◽

Cited By ~ 47

Author(s):

M. Willatzen ◽

T. Takahashi ◽

Y. Arakawa

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Nonlinear Gain ◽

Carrier Heating ◽

Strained Quantum Well

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Linewidth rebroadening due to nonlinear gain and index induced by carrier heating in strained quantum-well lasers

IEEE Photonics Technology Letters ◽

10.1109/68.481108 ◽

1996 ◽

Vol 8 (3) ◽

pp. 334-336 ◽

Cited By ~ 15

Author(s):

F. Girardin ◽

Guang-Hua Duan ◽

P. Gallion

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Nonlinear Gain ◽

Carrier Heating ◽

Strained Quantum Well

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Transmission line model for strained quantum well lasers including carrier transport and carrier heating effects

Applied Optics ◽

10.1364/ao.55.001518 ◽

2016 ◽

Vol 55 (7) ◽

pp. 1518

Author(s):

Mingjun Xia ◽

H. Ghafouri-Shiraz

Keyword(s):

Quantum Well ◽

Transmission Line ◽

Carrier Transport ◽

Quantum Well Lasers ◽

Transmission Line Model ◽

Line Model ◽

Carrier Heating ◽

Heating Effects ◽

Strained Quantum Well

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Nonlinear gain suppression in quantum-well lasers due to carrier heating: the roles of carrier energy relaxation, electron-hole interaction, and Auger effect

IEEE Photonics Technology Letters ◽

10.1109/68.541543 ◽

1996 ◽

Vol 8 (11) ◽

pp. 1441-1443 ◽

Cited By ~ 7

Author(s):

J. Wang ◽

H. Schweizer

Keyword(s):

Quantum Well ◽

Energy Relaxation ◽

Quantum Well Lasers ◽

Electron Hole ◽

Nonlinear Gain ◽

Carrier Heating ◽

Carrier Energy ◽

Auger Effect ◽

Hole Interaction

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High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

Electronics Letters ◽

10.1049/el:19930165 ◽

1993 ◽

Vol 29 (2) ◽

pp. 240 ◽

Cited By ~ 6

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Buried Heterostructure ◽

Strained Quantum Well

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Nonlinear gain coefficients in semiconductor quantum-well lasers: effects of carrier diffusion, capture, and escape

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/2944.401211 ◽

1995 ◽

Vol 1 (2) ◽

pp. 316-330 ◽

Cited By ~ 68

Author(s):

Chin-Yi Tsai ◽

Chin-Yao Tsai ◽

Yu-Hwa Lo ◽

R.M. Spencer ◽

L.F. Eastman

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Nonlinear Gain ◽

Carrier Diffusion ◽

Semiconductor Quantum Well

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Comment on “Theory and Experiment of ${\hbox{In}}_{1-{x}}{\hbox {Ga}}_{x}{\hbox {As}}_{y}{\hbox{P}}_{1-{y}}$ and ${\hbox{In}}_{1-{x}-{y}}{\hbox {Ga}}_{x}{\hbox {Al}}_{y}{\hbox {As}}$ Long-Wavelength-Strained Quantum-Well Lasers”

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.2009.2025251 ◽

2009 ◽

Vol 45 (10) ◽

pp. 1302-1302 ◽

Cited By ~ 1

Author(s):

Yean-Sheng Yong ◽

Hin-Yong Wong ◽

Ho-Kwang Yow

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Long Wavelength ◽

Strained Quantum Well ◽

Theory And Experiment

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Temperature-dependent behavior of 980-nm strained quantum well lasers

10.1117/12.208443 ◽

1995 ◽

Cited By ~ 1

Author(s):

Rashit F. Nabiev ◽

Edward C. Vail ◽

Constance J. Chang-Hasnain

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Dependent ◽

Dependent Behavior ◽

Strained Quantum Well ◽

Temperature Dependent Behavior

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Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.760325 ◽

1999 ◽

Vol 35 (5) ◽

pp. 771-782 ◽

Cited By ~ 170

Author(s):

J. Minch ◽

S.H. Park ◽

T. Keating ◽

S.L. Chuang

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Long Wavelength ◽

Strained Quantum Well ◽

Theory And Experiment

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ZnMgSSe/ZnSSe/CdZnSe strained quantum well lasers grown on (511)A

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588148 ◽

1995 ◽

Vol 13 (2) ◽

pp. 731 ◽

Cited By ~ 2

Author(s):

I. W. Tao

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Strained Quantum Well

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Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects

Electronics Letters ◽

10.1049/el:19930583 ◽

1993 ◽

Vol 29 (10) ◽

pp. 873-875 ◽

Cited By ~ 9

Author(s):

Y.K. Sin ◽

H. Horikawa ◽

Y. Matsui ◽

T. Kamijoh

Keyword(s):

Quantum Well ◽

Optical Interconnects ◽

High Speed ◽

Quantum Well Lasers ◽

Laser Threshold ◽

Buried Heterostructure ◽

Strained Quantum Well

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