Mathematical models for current, voltage, and coupling capacitor voltage transformers

2000 ◽  
Vol 15 (1) ◽  
pp. 62-72 ◽  
Author(s):  
D.A. Tziouvaras ◽  
P. McLaren ◽  
G. Alexander ◽  
D. Dawson ◽  
J. Esztergalyos ◽  
...  
2001 ◽  
Vol 16 (4) ◽  
pp. 827-828 ◽  
Author(s):  
G. Swift ◽  
D.A. Tziouvaras ◽  
P. McLaren ◽  
G. Alexander ◽  
D. Dawson ◽  
...  

2013 ◽  
Vol 740-742 ◽  
pp. 1010-1013 ◽  
Author(s):  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Vladimir A. Ilyin ◽  
Alexey F. Kardo-Sysoev ◽  
Maria A. Kuznetsova ◽  
...  

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.


1984 ◽  
Vol PER-4 (5) ◽  
pp. 44-45 ◽  
Author(s):  
D. L. Hillhouse ◽  
O. Petersons ◽  
W. C. Sze

2019 ◽  
Vol 34 (5) ◽  
pp. 1874-1884 ◽  
Author(s):  
Raphael Leite de Andrade Reis ◽  
Washington Luiz Araujo Neves ◽  
Felipe V. Lopes ◽  
Damasio Fernandes

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