High-frequency ultrasonic cleaning tank utilizing oblique incidence

1996 ◽  
Vol 43 (4) ◽  
pp. 531-535 ◽  
Author(s):  
H. Hatano ◽  
S. Kanai
Keyword(s):  
High Frequency ◽  
Oblique Incidence ◽  
Ultrasonic Cleaning

scholarly journals Marked Enhancement of Roll-Off Frequency in FeCoN Synthetic Antiferromagnetic Films Deposited by Oblique Incidence

Materials ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2328
Author(s):  
Luran Zhang ◽  
Dandan Gao ◽  
Huan Liu ◽  
Jiyang Xie ◽  
Wanbiao Hu
Keyword(s):  
High Frequency ◽  
Oblique Incidence ◽  
Magnetic Thin Films ◽  
Soft Magnetic ◽  
High Frequency Region ◽  
Glass Substrates ◽  
Marked Enhancement ◽  
Oblique Deposition ◽  
Potential Applications ◽  
Sputtering System

A series of FeCoN films were successfully deposited on glass substrates in a magnetron sputtering system. Using oblique incidence method and FeCoN/Ru/FeCoN synthetic antiferromagnetic (SAF) structure, two additional anisotropies energy were introduced: oblique incidence anisotropy and exchange anisotropy energy, which marked enhancement of the effective magnetic anisotropy (Hk). The increment of Hk results in a significant improvement in the roll-off frequency of these films. The roll-off frequency of FeCoN/Ru/FeCoN films with SAF structure can reach up to 8.6 GHz. A feasible approach to conveniently controlling Hk of soft magnetic thin films by using oblique deposition and SAF structure can further improve their properties for the potential applications in the high frequency region.

Removal of Submicron Particles Using High Frequency Ultrasonics

1996 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Fen Dai
Keyword(s):  
High Frequency ◽  
Semiconductor Manufacturing ◽  
Submicron Particles ◽  
Particle Removal ◽  
Cleaning Process ◽  
Submicron Particle ◽  
New Techniques ◽  
Megasonic Cleaning ◽  
Ultrasonic Cleaning ◽  
Particulate Contamination

Abstract High-frequency ultrasonic cleaning is widely used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. High frequency (near 1 MHz) ultrasonic cleaning (known as megasonic cleaning) is specially used in semiconductor manufacturing [1]. Many studies concerning submicron particle removal using megasonic and ultrasonic cleaning has been conducted recently [2–7]. The megsonic cleaning process proved to be the essential processes in cleaning silicon wafers after processes such as CMP, RIE, CVD, Sputter, etc. This paper introduces recent results that involve new techniques for introducing the ultrasonic energy in the cleaning bath.

scholarly journals Solar eclipse effects of 22 July 2009 on Sporadic-E

2010 ◽  
Vol 28 (2) ◽  
pp. 353-357 ◽  
Author(s):  
G. Chen ◽  
Z. Zhao ◽  
C. Zhou ◽  
G. Yang ◽  
Y. Zhang
Keyword(s):  
Solar Eclipse ◽  
High Frequency ◽  
Oblique Incidence ◽  
Critical Frequency ◽  
Eastern China ◽  
Doppler Frequency ◽  
Doppler Frequency Shift ◽  
Radio Systems ◽  
Sporadic E ◽  
The One

Abstract. The total solar eclipse of 22 July 2009, was visible from some regions of China and the intense sporadic-E (Es) that broke out during the solar eclipse period over the eastern China provided a unique chance to study solar eclipse effects on the Es-layer. The ground based high-frequency (HF) vertical-incidence and oblique-incidence backscatter radio systems in Wuhan and an HF oblique receivers located in Suzhou were operated to detect the Es-layer. The vertical, oblique and backscatter ionograms of 22 and 23 July were recorded, processed and analyzed. The analyzing results show that the critical frequency of Es, the hop number and power of the rays transmitted from Wuhan to Suzhou as well as the Doppler frequency shift of the one-hop oblique-incidence waves reflected by the Es-layer all increased during the solar eclipse period. These variations are displayed in the paper and explained to be induced by the wind-field, which is produced by the powerful meridional air flows from the sunshine region to the moon's shadow.

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