A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process

2002 ◽  
Vol 23 (5) ◽  
pp. 237-239 ◽  
Author(s):  
Jau-Yi Wu ◽  
Hwei-Heng Wang ◽  
Po-Wen Sze ◽  
Yeong-Her Wang ◽  
Mau-Phon Houng
Keyword(s):  
Liquid Phase ◽  
Oxidation Process ◽  
Shallow Trench Isolation ◽  
Gaas Devices ◽  
Trench Isolation ◽  
Enhanced Oxidation ◽  
Phase Chemical

Liquid Phase Chemical Enhanced Oxidation on AlGaAs and Its Application

2004 ◽  
Vol 43 (7A) ◽  
pp. 4087-4091 ◽  
Author(s):  
Kuan-Wei Lee ◽  
Yeong-Her Wang ◽  
Mau-Phon Houng
Keyword(s):  
Liquid Phase ◽  
Enhanced Oxidation ◽  
Phase Chemical

Fabrication of GaAs Schottky diode by liquid phase chemical enhanced oxidation

2004 ◽  
Vol 48 (9) ◽  
pp. 1683-1686 ◽  
Author(s):  
Chih-Cheng Wang ◽  
Hou-Kuei Huang ◽  
Yeong-Her Wang ◽  
Mau-Phon Houng ◽  
Chang-Luen Wu ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Schottky Diode ◽  
Enhanced Oxidation ◽  
Phase Chemical

Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation

2008 ◽  
Vol 52 (2) ◽  
pp. 289-293 ◽  
Author(s):  
Jian-Jiun Huang ◽  
Dei-Wei Chou ◽  
Po-Wen Sze ◽  
Yeong-Her Wang
Keyword(s):  
Liquid Phase ◽  
Diffusion Barrier ◽  
Native Oxide ◽  
Barrier Layers ◽  
Enhanced Oxidation ◽  
Phase Chemical

Liquid Phase Chemical-Enhanced Oxidation for GaAs Operated Near Room Temperature

1998 ◽  
Vol 37 (Part 2, No. 1A/B) ◽  
pp. L67-L70 ◽  
Author(s):  
Hwei-Heng Wang ◽  
Chien-Jung Huang ◽  
Yeong-Her Wang ◽  
Mau-Phon Houng
Keyword(s):  
Liquid Phase ◽  
Room Temperature ◽  
Enhanced Oxidation ◽  
Phase Chemical

Fabrication and application of GaAs-on-insulator structure prepared through liquid-phase chemical-enhanced oxidation

Vacuum ◽  
2020 ◽  
Vol 171 ◽  
pp. 109007
Author(s):  
Yi-Shiang Chen ◽  
Ching-Yi Kao ◽  
Kuan-Wei Lee ◽  
Yeong-Her Wang
Keyword(s):  
Liquid Phase ◽  
Enhanced Oxidation ◽  
Phase Chemical

Effects of pH Values on the Kinetics of Liquid‐Phase Chemical‐Enhanced Oxidation of GaAs

1999 ◽  
Vol 146 (6) ◽  
pp. 2328-2332 ◽  
Author(s):  
Hwei‐Heng Wang ◽  
Jau‐Yi Wu ◽  
Yeong‐Her Wang ◽  
Mau‐Phon Houng
Keyword(s):  
Liquid Phase ◽  
Ph Values ◽  
Effects Of Ph ◽  
Enhanced Oxidation ◽  
Kinetics Of ◽  
Phase Chemical

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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