Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

2000 ◽  
Vol 21 (9) ◽  
pp. 445-447 ◽  
Author(s):  
Sang-Hyun Oh ◽  
D. Monroe ◽  
J.M. Hergenrother
Keyword(s):  
Analytic Description ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Fully Depleted ◽  
Surrounding Gate ◽  
Channel Effects

ULTIMATE MOSFETs ON SOI: ULTRA THIN, SINGLE GATE, DOUBLE GATE, OR GROUND PLANE

2000 ◽  
Vol 10 (01) ◽  
pp. 217-230 ◽  
Author(s):  
S. CRISTOLOVEANU ◽  
T. ERNST ◽  
D. MUNTEANU ◽  
T. OUISSE
Keyword(s):  
Ground Plane ◽  
Silicon On Insulator ◽  
Double Gate ◽  
Quantum Calculations ◽  
Short Channel Effects ◽  
Short Channel ◽  
Fully Depleted ◽  
Channel Effects

We tentatively present possible architectures of Silicon On Insulator (SOI) transistors for the final stages of the scaling of silicon microelectronics. The scaling trends for conventional partially depleted and fully depleted SOI MOSFETs are critically examined. A ground plane can considerably attenuate short-channel effects. The manufacturability of extremely thin MOSFETs is demonstrated. Based on quantum calculations, we discuss the merits of double-gate transistors with volume inversion.

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

A New Approach to the Characteristics and Short-Channel Effects of Double-Gate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study

2012 ◽  
Vol 67 (6-7) ◽  
pp. 317-326 ◽  
Author(s):  
Alireza Heidari ◽  
Niloofar Heidari ◽  
Foad Khademi Jahromi ◽  
Roozbeh Amiri ◽  
Mohammadali Ghorbani
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Open Boundary ◽  
Double Gate ◽  
Short Channel Effects ◽  
Drain Voltage ◽  
Short Channel ◽  
Channel Effects ◽  
The Impact

In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

Examining the Short Channel Characteristic and Performance of Triple Material Double Gate Silicon-on-Nothing Metal Oxide Semiconductor Field Effect Transistors with Grading Channel Concentration

2019 ◽  
Vol 14 (12) ◽  
pp. 1672-1679 ◽  
Author(s):  
Ningombam Ajit Kumar ◽  
Aheibam Dinamani Singh ◽  
Nameirakpam Basanta Singh
Keyword(s):  
Surface Potential ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel Effects ◽  
Parabolic Approximation ◽  
Short Channel ◽  
Channel Characteristic ◽  
Channel Effects ◽  
And Performance

A 2D surface potential analytical model of a channel with graded channel triple material double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the benefits of triple material in gate engineering and graded doping in the channel. The surface potential distribution function of the GCTMDG SON MOSFET is obtained by solving the Poisson's equation, applying suitable boundary conditions, and using a parabolic approximation method. It is seen in the proposed device that the Short Channel Effects (SCEs) are subdued due to the apprehensible step in the surface potential profile that screen the potential of the drain. The effects of the various device parameters are studied to check the merit of the device. For the validation of the proposed device, it is compared with the simulated results of ATLASTM, a device simulator from SILVACO.

Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method

2004 ◽  
Vol 48 (7) ◽  
pp. 1163-1168 ◽  
Author(s):  
Ji-Sun Park ◽  
Hyungsoon Shin ◽  
Daniel Connelly ◽  
Dan Yergeau ◽  
Zhiping Yu ◽  
...  
Keyword(s):  
Density Gradient ◽  
Gradient Method ◽  
Quantum Effects ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects
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