Carrier lifetime extraction in fully depleted dual-gate SOI devices

1999 ◽  
Vol 20 (5) ◽  
pp. 209-211 ◽  
Author(s):  
T. Ernst ◽  
A. Vandooren ◽  
S. Cristoloveanu ◽  
J.-P. Colinge ◽  
D. Flandre
Keyword(s):  
Carrier Lifetime ◽  
Fully Depleted ◽  
Dual Gate ◽  
Soi Devices

Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices

1999 ◽  
Vol 46 (7) ◽  
pp. 1503-1509 ◽  
Author(s):  
T. Ernst ◽  
S. Cristoloveanu ◽  
A. Vandooren ◽  
T. Rudenko ◽  
J.-P. Colinge
Keyword(s):  
Carrier Lifetime ◽  
Fully Depleted ◽  
Dual Gate ◽  
Soi Devices ◽  
Recombination Current

Carrier lifetime extraction in fully-depleted SOI devices

2002 ◽  
Author(s):  
T. Ernst ◽  
S. Cristoloveanu ◽  
A. Vandooren ◽  
J.-P. Colinge ◽  
T.E. Rudenko
Keyword(s):  
Carrier Lifetime ◽  
Fully Depleted ◽  
Soi Devices

scholarly journals Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1585
Author(s):  
Hanbin Wang ◽  
Jinshun Bi ◽  
Mengxin Liu ◽  
Tingting Han
Keyword(s):  
Gate Voltage ◽  
Computer Aided Design ◽  
Silicon On Insulator ◽  
Fully Depleted ◽  
Gate Structure ◽  
Different Temperatures ◽  
Dual Gate ◽  
Sensitivity Changes ◽  
Increasing Temperature ◽  
Aided Design

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

2008 ◽  
Vol 55 (6) ◽  
pp. 3259-3264 ◽  
Author(s):  
Farah E. Mamouni ◽  
Sriram K. Dixit ◽  
Ronald D. Schrimpf ◽  
Philippe C. Adell ◽  
Ivan S. Esqueda ◽  
...  
Keyword(s):  
Gate Length ◽  
Fully Depleted ◽  
Band To Band Tunneling ◽  
Drain Bias ◽  
Soi Devices

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

2014 ◽  
Vol 778-780 ◽  
pp. 841-844 ◽  
Author(s):  
Koji Nakayama ◽  
Shuji Ogata ◽  
Toshihiko Hayashi ◽  
Tetsuro Hemmi ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
High Voltage ◽  
Recovery Time ◽  
Carrier Lifetime ◽  
Low Voltage ◽  
Reduction Rate ◽  
Drift Region ◽  
Pin Diode ◽  
Fully Depleted ◽  
Fast Switching ◽  
Reverse Recovery Time

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

Total ionizing dose effects on deca-nanometer fully depleted SOI devices

2005 ◽  
Vol 52 (6) ◽  
pp. 2345-2352 ◽  
Author(s):  
P. Paillet ◽  
M. Gaillardin ◽  
V. Ferlet-Cavrois ◽  
A. Torres ◽  
O. Faynot ◽  
...  
Keyword(s):  
Total Ionizing Dose ◽  
Fully Depleted ◽  
Dose Effects ◽  
Soi Devices ◽  
Total Ionizing Dose Effects

Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

2007 ◽  
Vol 54 (6) ◽  
pp. 2174-2180 ◽  
Author(s):  
Philippe C. Adell ◽  
Hugh J. Barnaby ◽  
Ron D. Schrimpf ◽  
Bert Vermeire
Keyword(s):  
Leakage Current ◽  
Fully Depleted ◽  
Band To Band Tunneling ◽  
Soi Devices

Thermal Effects in Fully-Depleted SOI Devices

2019 ◽  
Vol 23 (1) ◽  
pp. 337-344 ◽  
Author(s):  
D. Vasileska ◽  
K. Ralevab ◽  
S. M. Goodnick
Keyword(s):  
Thermal Effects ◽  
Fully Depleted ◽  
Soi Devices
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