Reduction of p/sup +/-n/sup +/ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

1991 ◽  
Vol 12 (4) ◽  
pp. 163-165 ◽  
Author(s):  
Z. Matutinovic-Krstelj ◽  
E.J. Prinz ◽  
P.V. Schwartz ◽  
J.C. Sturm
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Tunneling Current ◽  
Bipolar Transistors ◽  
Base Current

Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

1991 ◽  
Vol 220 ◽  
Author(s):  
Ž Matutinović-Krstelj ◽  
E. J. Prinz ◽  
P. V. Schwartz ◽  
J. C. Sturm
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Vapor Deposition ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Thermal Chemical Vapor Deposition ◽  
Base Current ◽  
Different Temperatures ◽  
High Reduction

ABSTRACTA reduction of parasitic tunneling current by three orders of magnitude in epitaxial p+-n+ junctions grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) compared to previously published ion implantation results is reported. These results are very important for the reduction of base current in scaled homojunction and Si/SiGe/Si heterojunction bipolar transistors. High reduction in tunneling currents allows higher limits to transistor base and emitter dopings. Significant tunneling was observed when the doping levels at the lighter doped side of the junction were of the order of 1×1019cm−3 for both Si/Si and SiGe/Si devices. These results were confirmed by I-V measurements performed at different temperatures. Since the tunneling current is mediated by midgap states at the junction, these results demonstrate the high quality of the epitaxial interface.

EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AlGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT

2012 ◽  
Vol 19 (04) ◽  
pp. 1250043
Author(s):  
SHIH-WEI TAN ◽  
SHIH-WEN LAI
Keyword(s):  
Schottky Diode ◽  
Heterojunction Bipolar Transistors ◽  
Ideality Factor ◽  
Equivalent Circuit Model ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Collector Current ◽  
Base Current ◽  
Modeling Analysis ◽  
Good Agreement

Characterization and modeling analysis on both ideality factor of the collector current (η C ) and the base current (η B ) have higher than the excepted values of 1.0 and 2.0, respectively, for npn Al GaN/GaN heterojunction bipolar transistors (HBTs) have been reported. We employ the rapid thermal process annealing (RTP-annealing) to modify the base parasitical Schottky diode (called A-HBTs) after the as-deposited Ni/Au bilayers on the base layer for electrode with no annealing (called N-HBTs) to compare with each other. For a HBT operated in Gummel-plot configuration, experimental and modeling results indicate that the base parasitical Schottky diode (BPSD) causes the base current (I B ) and collector current (I C ) with high ideality factor and raise the base-emitter voltage (V BE ) to higher operation point, and therefore lead to more power consumption. Furthermore, the extended Ebers–Moll equivalent-circuit model together with the extracted device parameters provided simulated results that were in a good agreement with experimental ones.

Failure Model Research of Power HBTs

2014 ◽  
Vol 926-930 ◽  
pp. 1348-1351
Author(s):  
Jing Wei Yang ◽  
Meng Meng Xu
Keyword(s):  
Thermal Stress ◽  
Heterojunction Bipolar Transistors ◽  
Microwave Power ◽  
Power Dissipation ◽  
Bipolar Transistors ◽  
Failure Model ◽  
Experiment System ◽  
Base Current ◽  
Model Research ◽  
Heating Effects

Heterojunction bipolar transistors (HBTs) are playing an important role in microwave and power applications. When HBTs operated at high power, the power dissipation and self-heating effects will enable the generation of electrical properties in the transistor failure. The failure experiment system of microwave power HBTs was established. Based on this system, the changes of electrical parameters of HBTs in deferent stress, such as Gummel plots, base current various different base-emitter voltage and base-collector voltage, were measured and analyzed. At the same time, the failure of base current of SiGe HBTs under the condition of FC, SC and thermal stress are studied respectively. It was found that ΔIBis the sensitive parameter of electrical and thermal stress. Based on this reason, we presented the failure model of IB. This model could explain the experiment phenomenon successfully, which is very important and useful for applications of microwave power analog IC’s.

scholarly journals Modeling the post‐burn‐in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistors

1996 ◽  
Vol 79 (9) ◽  
pp. 7348-7352 ◽  
Author(s):  
S. Sheu ◽  
J. J. Liou ◽  
C. I. Huang ◽  
D. C. Williamson
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Base Current

Successful Preparation of High Frequency HBT by Integrated RTCVD Processes

1995 ◽  
Vol 387 ◽  
Author(s):  
G. Ritter ◽  
B. Tillack ◽  
D. Knoll
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Doping Profile ◽  
60 Ghz ◽  
Base Current ◽  
Si Substrates ◽  
Mesa Technology ◽  
Oscillation Frequencies

AbstractComplete epitaxial Si-SiGe-Si- stacks with a defined doping profile for each component have been deposited on Si substrates from the system SiH4, GeH4, H2, B2H6, PH3 by RTCVD. The deposition has been carried out at a temperature of 650°C for Si and of 500°C for SiGe, respectively, both at a pressure of 2 mbar. The developed epitaxial process including an effective H2 in-situ preclean annealing has been integrated in a simple double mesa technology for the preparation of SiGe base heterojunction bipolar transistors (HBT). Despite the simplicity of the technology and the lithographical level allowing emitter dimensions of 2.3×2.5 μm2 only, test devices on 4” wafers reached transit frequencies fT and maximum oscillation frequencies fmax of higher than 60 GHz and 30 GHz, respectively. Besides, a low base current has been measýnl as proof for a good layer quality.

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