A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs

1998 ◽  
Vol 19 (11) ◽  
pp. 405-407 ◽  
Author(s):  
M.H. Somerville ◽  
R. Blanchard ◽  
J.A. del Alamo ◽  
G. Duh ◽  
P.C. Chao
Keyword(s):  
Breakdown Voltage ◽  
Extraction Technique ◽  
Gate Current ◽  
State Breakdown

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Author(s):  
Stefan Schwantes ◽  
Josef Furthaler ◽  
Bernd Schauwecker ◽  
Franz Dietz ◽  
Michael Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

Analysis of the Back-Gate Effect on the on-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Vol 6 (3) ◽  
pp. 377-385 ◽  
Author(s):  
S. Schwantes ◽  
J. Furthaler ◽  
B. Schauwecker ◽  
F. Dietz ◽  
M. Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage

2006 ◽  
Vol 955 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Jiang Li ◽  
Nariaki Ikeda ◽  
Seikoh Yoshida
Keyword(s):  
Breakdown Voltage ◽  
Large Scale ◽  
Room Temperature ◽  
Drain Current ◽  
High Breakdown Voltage ◽  
Large Current ◽  
Drain Electrode ◽  
Current Operation ◽  
State Breakdown ◽  
State Resistance

ABSTRACTIt is reported that we demonstrated a large current operation AlGaN/GaN HFET with a low-on state resistance and a high breakdown voltage operation at room temperature and 500 K. We developed our unique ohmic electrode using Ti/AlSi/Mo. In addition, we investigated the dependence between the distance from the gate electrode to the drain electrode and the off-state breakdown voltage. As a result, the breakdown voltage of a unit HFET was over 1100 V. Furthermore, on the large scale HFET with the gate width of 240 mm, the maximum drain current of over 50 A was obtained at room temperature and also, that of over 25 A was obtained at 500 K. The off-state breakdown voltage was obtained about 800 V at room temperature and about 600 V at 500 K, although Si-based FETs can not operate in such a high temperature.

A Novel FEM-LDMOS of Improved Off-state Breakdown Voltage Without Additional Mask

2011 ◽  
Author(s):  
H. B. Chen ◽  
C. J. Chang ◽  
J. J. Wu ◽  
W. C. Chen ◽  
C. C. Tsai ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
State Breakdown
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