InGaAs metal-semiconductor field-effect transistor with Langmuir-Blodgett deposited gate structure

1988 ◽  
Vol 9 (5) ◽  
pp. 220-222 ◽  
Author(s):  
W.K. Chan ◽  
G.-K. Chang ◽  
R. Bhat ◽  
N.E. Schlotter
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Langmuir Blodgett ◽  
Gate Structure ◽  
Effect Transistor

scholarly journals Enzyme sensors based on ion-sensitive field effect transistor. Use of Langmuir-Blodgett membrane as a support for immobilizing penicillinase.

1987 ◽  
Vol 3 (3) ◽  
pp. 271-272 ◽  
Author(s):  
Jun-ichi ANZAI ◽  
Kenji FURUYA ◽  
Chieh-wu CHEN ◽  
Tetsuo OSA ◽  
Tadayuki MATSUO
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Langmuir Blodgett ◽  
Enzyme Sensors ◽  
Effect Transistor

Field-effect transistor based on organometallic Langmuir-Blodgett film

1993 ◽  
Vol 29 (15) ◽  
pp. 1377 ◽  
Author(s):  
C. Pearson ◽  
J.E. Gibson ◽  
M.C. Petty ◽  
A.J. Moore ◽  
M.R. Bryce
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Blodgett Film ◽  
Langmuir Blodgett ◽  
Effect Transistor ◽  
Langmuir Blodgett Film

Modal Analysis and Design of a Vertically Movable Gate Field Effect Transistor (VMGFET) Proposed for Low-Frequency Sensing Applications

2012 ◽  
Vol 268-270 ◽  
pp. 1538-1543
Author(s):  
Justin Williams ◽  
William B.D. Forfang ◽  
Byoung Hee You ◽  
In Hyouk Song
Keyword(s):  
Modal Analysis ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Free Vibrations ◽  
Element Analysis ◽  
Analysis And Design ◽  
Sensing Applications ◽  
Gate Structure ◽  
Effect Transistor

The objective of this study is to design and optimize a vertically movable gate field effect transistor (VMGFET) - suitable for low-frequency, high-sensitivity applications - with an emphasis on modal analysis of the suspended gate structure, optimization of mesh density within the employed finite element analysis software, and optimization of the moveable gate dimensions given its relationship with fabrication complexity and the structure’s resonant frequencies. The methods of design, optimization, and analysis were carried out with COMSOL Multiphysics 4.2a under the assumption of no damping with free vibrations. The results indicate optimal dimensions of the suspended gate structure - given constraints on size, resonance, and fabrication complexity - which suggest a beam thickness of 3 µm and a beam width of 15 µm, yielding an upper limit of input force frequencies near 2 kHz.

Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

2017 ◽  
Vol 56 (9) ◽  
pp. 091003 ◽  
Author(s):  
Satoshi Nakazawa ◽  
Nanako Shiozaki ◽  
Noboru Negoro ◽  
Naohiro Tsurumi ◽  
Yoshiharu Anda ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Structure ◽  
Effect Transistor ◽  
Recessed Gate
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