Low-frequency noise in near-fully-depleted TFSOI MOSFETs

1998 ◽  
Vol 19 (2) ◽  
pp. 40-43 ◽  
Author(s):  
J.A. Babcock ◽  
D.K. Schroder ◽  
Ying-Che Tseng
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Fully Depleted

scholarly journals Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

2017 ◽  
Vol 12 (2) ◽  
pp. 62-70
Author(s):  
Rafael Assalti ◽  
Rodrigo T. Doria ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Spectral Density ◽  
Gate Voltage ◽  
Low Frequency ◽  
Drain Current ◽  
Current Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Fully Depleted ◽  
Self Cascode

In this paper the origin of low-frequency noise in the Asymmetric Self-Cascode (A-SC) structure composed by Fully Depleted SOI nMOSFETs is investigated through experimental results. It is shown that the predominant noise source of the A-SC structure is linked to carrier number fluctuations, being governed by the noise generated in the transistor near the source. Larger channel doping concentrations degrade the quality of the Si-SiO2 interface and the gate oxide, which causes an increase of the normalized drain current noise spectral density, just as the reduction of the gate voltage overdrive, since there are few carriers in the channel. The A-SC structures have showed higher noise compared with single transistors. In saturation regime, the increase of the gate voltage overdrive has incremented the corner frequency, shifting the g-r noise to higher frequencies. Besides that, the normalized noise has been significantly increased when compared with the linear regime due to the rise of the drain current noise spectral density.

High gate voltage drain current leveling off and its low-frequency noise in 65nm fully-depleted strained and non-strained SOI nMOSFETs

2008 ◽  
Vol 52 (5) ◽  
pp. 801-807 ◽  
Author(s):  
N. Lukyanchikova ◽  
N. Garbar ◽  
V. Kudina ◽  
A. Smolanka ◽  
M. Lokshin ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Fully Depleted

MODELING AND SIMULATION OF COUPLING EFFECT ON LOW FREQUENCY NOISE IN ADVANCED SOI MOSFETS

2008 ◽  
Vol 08 (01) ◽  
pp. L87-L94 ◽  
Author(s):  
LEILY ZAFARI ◽  
JALAL JOMAAH ◽  
GERARD GHIBAUDO
Keyword(s):  
Film Thickness ◽  
Noise Level ◽  
Coupling Effect ◽  
Silicon Film ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Interface Quality ◽  
Fully Depleted ◽  
Scattering Rate

Low frequency noise modeling and numerical simulation have been carried out to study the influence of the back interface quality and the silicon film thickness in Fully Depleted SOI MOSFETs, with special emphasis on the coupling effect. In devices with a standard film thickness, the noise level is higher than for an equivalent interface in bulk device, which could be a great concern for analog applications. On the other hand, it has been shown that in very thin SOI devices with a symmetrical structure (Double Gate architecture), the reduction of electric field in the silicon film, induces a conduction channel in the middle of the film, away from both interfaces which in turn reduces the scattering rate of carriers, decreasing the noise level.

scholarly journals Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities

2013 ◽  
Vol 2 (11) ◽  
pp. Q205-Q210 ◽  
Author(s):  
E. Simoen ◽  
M. Aoulaiche ◽  
S. D. dos Santos ◽  
J. A. Martino ◽  
V. Strobel ◽  
...  
Keyword(s):  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Fully Depleted ◽  
Challenges And Opportunities

Impact of front oxide quality on transient effects and low-frequency noise in partially and fully depleted SOI N-MOSFETs

2002 ◽  
Vol 46 (7) ◽  
pp. 1013-1017 ◽  
Author(s):  
S. Haendler ◽  
F. Dieudonné ◽  
J. Jomaah ◽  
F. Balestra ◽  
C. Raynaud ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Transient Effects ◽  
Fully Depleted

scholarly journals Lessons Learned from Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-On-Insulator nMOSFETs

2013 ◽  
Vol 53 (5) ◽  
pp. 49-61 ◽  
Author(s):  
E. R. Simoen ◽  
M. Aoulaiche ◽  
S. D. dos Santos ◽  
J. A. Martino ◽  
V. Strobel ◽  
...  
Keyword(s):  
Low Frequency ◽  
Lessons Learned ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Fully Depleted
Sign in / Sign up

Export Citation Format

Share Document