Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

1989 ◽  
Vol 10 (4) ◽  
pp. 150-152 ◽  
Author(s):  
S.R. Kurtz ◽  
L.R. Dawson ◽  
R.M. Biefeld ◽  
I.J. Fritz ◽  
T.E. Zipperian
2013 ◽  
Vol 59 ◽  
pp. 18-21 ◽  
Author(s):  
Sumith Bandara ◽  
Neil Baril ◽  
Patrick Maloney ◽  
Curtis Billman ◽  
Eric Nallon ◽  
...  

2019 ◽  
Vol 48 (10) ◽  
pp. 6145-6151 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
Sir B. Rafol ◽  
...  

2011 ◽  
Author(s):  
Koushik Banerjee ◽  
Jun Huang ◽  
Siddhartha Ghosh ◽  
Runshen Xu ◽  
Christos G. Takoudis ◽  
...  

1990 ◽  
Vol 216 ◽  
Author(s):  
Steven R. Kurtz

ABSTRACTAn overview is provided of long wavelength, photovoltaic detectors constructed with type II (also known as “staggered”), III-V superlattices. Specifically, the electronic properties of InAsSb strained-layer superlattices and prototype detectors utilizing these structures are described.


Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
Sir B. Rafol ◽  
...  

Author(s):  
David Z. Ting ◽  
Sarath D. Gunapala ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
...  

2013 ◽  
Author(s):  
Zhaobing Tian ◽  
Eric A. DeCuir ◽  
Priyalal S. Wijewarnasuriya ◽  
James W. Pattison ◽  
Nutan Gautam ◽  
...  

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