Improvement of hardness of MOS capacitors to electron-beam irradiation and hot-electron injection by ultradry oxidation of silicon

1989 ◽  
Vol 10 (1) ◽  
pp. 27-29 ◽  
Author(s):  
R. Haruta ◽  
Y. Ohji ◽  
Y. Nishioka ◽  
I. Yoshida ◽  
K. Mukai ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Electron Injection ◽  
Hot Electron ◽  
Beam Irradiation ◽  
Mos Capacitors ◽  
Hot Electron Injection

Measurements of Hydrogen Redistribution in Hot Electron Injection of Mos Capacitors

1992 ◽  
Vol 284 ◽  
Author(s):  
A. D. Marwick ◽  
D. A. Buchanan ◽  
D. J. Dimaria ◽  
Phil Saunders
Keyword(s):  
Nuclear Reaction ◽  
Depth Profiling ◽  
Electron Injection ◽  
Interface State ◽  
Hot Electron ◽  
Mos Capacitors ◽  
Hot Electron Injection ◽  
State Generation ◽  
Large Peak ◽  
Redistribution Of Hydrogen

ABSTRACTRedistribution of hydrogen caused by hot electron injection has been studied in large Al-gate capacitors using internal photemission followed by hydrogen depth profiling with the 15 N nuclear reaction. A large peak of hydrogen (∼ 1015 at /cm2) at the Al/SiO2 interface due to a hydrated layer on the surface of the SiO2 was found to act as a source of hydrogen during the photoinjection. A small fraction of the hydrogen released from this peak was found to be re-trapped near the Si/;SiO2 interface if a field of >1 MV/cm was applied to the SiO2 during the injection. Up to 2 × 1014 atoms/cm2 of hydrogen were found to be trapped at this interface for injected fluences up to 5 C/cm2. These results are discussed in terms of current models of interface state generation involving hydrogen.

Electron beam irradiation effects in thick-oxide MOS capacitors

1974 ◽  
Vol 21 (4) ◽  
pp. 14-19 ◽  
Author(s):  
A. G. Thomas ◽  
S. R. Butler ◽  
J. I. Goldstein ◽  
P. D. Parry
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Irradiation Effects ◽  
Mos Capacitors

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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