Influence of buffer layer thickness on DC performance of GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substrates

1988 ◽  
Vol 9 (12) ◽  
pp. 657-659 ◽  
Author(s):  
T. Ma ◽  
D. Ueda ◽  
W.-S. Lee ◽  
J. Adkisson ◽  
J.S. Harris
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Silicon Substrates ◽  
Buffer Layer Thickness

Effect of Buffer Layer Thickness on the Growth Properties of Hydrothermally Grown ZnO Nanorods

2011 ◽  
Vol 11 (2) ◽  
pp. 1409-1412 ◽  
Author(s):  
Ah Ra Kim ◽  
Ju-Young Lee ◽  
Bo Ra Jang ◽  
Hong Seung Kim ◽  
Young Ji Cho ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Zno Nanorods ◽  
Growth Properties ◽  
Buffer Layer Thickness

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

2010 ◽  
Vol 19 (3) ◽  
pp. 036801 ◽  
Author(s):  
Wu Yu-Xin ◽  
Zhu Jian-Jun ◽  
Chen Gui-Feng ◽  
Zhang Shu-Ming ◽  
Jiang De-Sheng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Structural Properties ◽  
Buffer Layer Thickness ◽  
Aln Buffer

Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Electrical Mobility ◽  
Seeded Growth ◽  
Electrical Transport Properties ◽  
Buffer Layer Thickness ◽  
Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

2004 ◽  
Vol 262 (1-4) ◽  
pp. 456-460 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Boyang Liu ◽  
HuiChao Zhu ◽  
Tianpeng Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Low Pressure ◽  
Zno Thin Films ◽  
Low Pressure Mocvd ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer

Growth and characteristics of ZnO films on growth side of freestanding diamond substrate dependent on buffer layer thickness

2010 ◽  
Vol 518 (19) ◽  
pp. 5396-5399 ◽  
Author(s):  
Shiyong Gao ◽  
Hongdong Li ◽  
Junwei Liu ◽  
Yingai Li ◽  
Xianyi Lü ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Zno Films ◽  
Diamond Substrate ◽  
Buffer Layer Thickness
Sign in / Sign up

Export Citation Format

Share Document