A new method of forming a thin single-crystal silicon diaphragm using merged epitaxial lateral overgrowth for sensor applications

1991 ◽  
Vol 12 (11) ◽  
pp. 614-616 ◽  
Author(s):  
J.J. Pak ◽  
G.W. Neudeck ◽  
A.E. Kabir ◽  
D.W. DeRoo ◽  
S.E. Staller
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
New Method ◽  
Epitaxial Lateral Overgrowth ◽  
Crystal Silicon ◽  
Sensor Applications ◽  
Lateral Overgrowth

Silicon Layers Grown on Patterned Substrates by Liquid Phase Epitaxy

1985 ◽  
Vol 54 ◽  
Author(s):  
E. Bauser ◽  
D. KÄss ◽  
M. Warth ◽  
H. P. Strunk
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Single Crystal Silicon ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Surfaces And Interfaces ◽  
Lateral Overgrowth ◽  
Via Holes

ABSTRACTSingle-crystal silicon layers and doping multilayers have been grown by liquid phase qpitaxy on silicon substrates. The substrates were either partially masked by SiO2, with via holes of various shapes and sizes, or patterned with SiO2 stripes, or profiled with grooves and ridges. The via holes and grooves were just refilled, or they acted as seeding areas for lateral overgrowth of the oxidized wafer up to 100μm. The silicon layers, interfaces and heterointerfaces were free of defects. With appropriate growth conditions the surfaces and interfaces of the epitaxial Si were outstandingly planar.

The Study of Seam Line Defects in Silicon-On-Oxide by Merged Epitaxial Lateral Overgrowth

1993 ◽  
Vol 317 ◽  
Author(s):  
Yangchin Shih ◽  
J. C. Lou ◽  
W. G. Oldham
Keyword(s):  
Epitaxial Film ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Formation Mechanisms ◽  
Crystal Silicon ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Low Dislocation Density ◽  
Line Defects

ABSTRACTSelective Epitaxial Growth of silicon through windows in SiO2 using low-temperature SiH2Cl2/H2 chemistry in a hot wall LPCVD system was used to form Epitaxial Lateral Overgrowth (ELO) regions of Silicon-on-insulator. In cases where pattern ‘width was less than two times epi film thickness, the ELO regions merged to form a continuous epitaxial film. In this study, 2.5 μm thick single crystal silicon layers were grown perfectly over oxide regions with very low dislocation density (< 104/cm2). The epitaxial Si/oxide interfaces were smooth and defect-free. However, a “seam”-like defect was occasionally observed in the epitaxial film on top of the oxide, at the locations where two growth fronts merged together. This crystallographic defect in some case extends through the whole Silicon-on-Oxide film and would be expected to be detrimental to electronic devices built on or close to it. The sturctures of these seam line defects were investigated in detail by transmission electron Microscopy (TEM). The formation mechanisms of these seam line defects and possible origins are discussed.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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