InP/InGaAs double-heterojunction bipolar transistors grown on [100] Si by metalorganic chemical vapor deposition

1991 ◽  
Vol 12 (7) ◽  
pp. 369-371 ◽  
Author(s):  
T. Makimoto ◽  
K. Kurishima ◽  
T. Kobayashi ◽  
T. Ishibashi
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