Electrical measurements of multipath interference in distributed Raman amplifiers

2001 ◽  
Vol 19 (4) ◽  
pp. 536-545 ◽  
Author(s):  
C.R.S. Fludger ◽  
R.J. Mears
Keyword(s):  
Electrical Measurements ◽  
Multipath Interference ◽  
Raman Amplifiers

Multipath Interference in Pulse-Pumped Fiber Raman Amplifiers: Analytical Approach

2010 ◽  
Vol 28 (18) ◽  
pp. 2701-2707 ◽  
Author(s):  
Vineetha Kalavally ◽  
Ivan D. Rukhlenko ◽  
Malin Premaratne ◽  
Tin Win
Keyword(s):  
Analytical Approach ◽  
Multipath Interference ◽  
Raman Amplifiers

CBED study of low-temperature InP grown by gas source MBE

1993 ◽  
Vol 51 ◽  
pp. 810-811
Author(s):  
R. Rajesh ◽  
M.J. Kim ◽  
J.S. Bow ◽  
R.W. Carpenter ◽  
G.N. Maracas
Keyword(s):  
Low Temperature ◽  
Second Phase ◽  
Material System ◽  
Ion Milling ◽  
Electrical Measurements ◽  
Gas Source ◽  
Structural And Electrical Properties ◽  
The One ◽  
Lt Inp ◽  
Gas Source Mbe

In our previous work on MBE grown low temperature (LT) InP, attempts had been made to understand the relationships between the structural and electrical properties of this material system. Electrical measurements had established an enhancement of the resistivity of the phosphorus-rich LT InP layers with annealing under a P2 flux, which was directly correlated with the presence of second-phase particles. Further investigations, however, have revealed the presence of two fundamentally different types of precipitates. The first type are the surface particles, essentially an artefact of argon ion milling and containing mostly pure indium. The second type and the one more important to the study are the dense precipitates in the bulk of the annealed layers. These are phosphorus-rich and are believed to contribute to the improvement in the resistivity of the material.The observation of metallic indium islands solely in the annealed LT layers warranted further study in order to better understand the exact reasons for their formation.

Effect of MCl (M = Na, K) addition on microstructure and electrical conductivity of forsterite

2020 ◽  
Vol 92 (1) ◽  
pp. 10901
Author(s):  
Saloua El Asri ◽  
Hamid Ahamdane ◽  
Lahoucine Hajji ◽  
Mohamed El Hadri ◽  
Moulay Ahmed El Idrissi Raghni ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Electrical Conductivity ◽  
Single Phase ◽  
Sol Gel ◽  
Complex Impedance ◽  
Transmission Spectra ◽  
Electrical Measurements ◽  
Cation Type ◽  
Edx Analyses ◽  
The Fourier Transform

Forsterite single phase powder Mg2SiO4 was synthesized by sol–gel method alongside with heat treatment, using two different cation alkaline salts MCl as mineralizers (M = Na, K) with various mass percentages (2.5, 5, 7.5, and 10 wt.%). In this work, we report on the effect of the cation type and the added amount of used mineralizer on microstructure and electrical conductivity of Mg2SiO4. The formation of forsterite started at 680–740  °C and at 630–700  °C with KCl and NaCl respectively, as shown by TG-DTA and confirmed by XRD. Furthermore, the Fourier transform infrared (FTIR) transmission spectra indicated bands corresponding to vibrations of forsterite structure. The morphology and elemental composition of sintered ceramics were examined by SEM-EDX analyses, while their densities, which were measured by Archimedes method, increased with addition of both alkaline salts. The electrical measurements were performed by Complex Impedance Spectroscopy. The results showed that electrical conductivity increased with the addition of both mineralizers, which was higher for samples prepared with NaCl than those prepared with KCl.

LABORATORY PRACTICE AT THE COURSE SPECIAL METHODS AND MEANS OF ELECTRICAL MEASUREMENTS IN THE CONTEXT OF ERASMUS ALIOT PROJECT

2018 ◽  
Vol 27 (103) ◽  
pp. 273-279
Author(s):  
E. J. Maevskaya, ◽  
◽  
O. О. Topuzanov, ◽  
V. L. Biliaiev, ◽  
S. N. Oginskaya, ◽  
...  
Keyword(s):  
Electrical Measurements ◽  
Laboratory Practice

Silicon Surface Chemical Treatments in Oxide/Nitride Dielectric Stack Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
D. Jacques ◽  
S. Petitdidier ◽  
J.L. Regolini ◽  
K. Barla
Keyword(s):  
Oxygen Content ◽  
Oxide Thickness ◽  
Morphological Data ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Chemical Cleaning ◽  
Force Microscopy ◽  
Chemical Treatments ◽  
Atomic Force ◽  
Interfacial Oxygen

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.

Development of High Permeability Core Materials for Embeddable Inductors in Flexible Organic Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
C. K. Liu ◽  
P. L. Cheng ◽  
S. Y. Y. Leung ◽  
T. W. Law ◽  
D. C. C. Lam
Keyword(s):  
Low Temperature ◽  
Sol Gel ◽  
Circuit Board ◽  
Organic Substrates ◽  
Circuit Boards ◽  
High Permeability ◽  
Electrical Measurements ◽  
Different Temperatures ◽  
Spiral Inductors ◽  
Ceramic Tape

AbstractCapacitors, resistors and inductors are surface mounted components on circuit boards, which occupy up to 70% of the circuit board area. For selected applications, these passives are packaged inside green ceramic tape substrates and sintered at temperatures over 700°C in a co-fired process. These high temperature processes are incompatible with organic substrates, and low temperature processes are needed if passives are to be embedded into organic substrates. A new high permeability dual-phase Nickel Zinc Ferrite (DP NZF) core fabricated using a low temperature sol-gel route was developed for use in embedded inductors in organic substrates. Crystalline NZF powder was added to the sol-gel precursor of NZF. The solution was deposited onto the substrates as thin films and heat-treated at different temperatures. The changes in the microstructures were characterized using XRD and SEM. Results showed that addition of NZF powder induced low temperature transformation of the sol-gel NZF phase to high permeability phase at 250°C, which is approximately 350°C lower than transformation temperature for pure NZF sol gel films. Electrical measurements of DP NZF cored two-layered spiral inductors indicated that the inductance increased by three times compared to inductors without the DP NZF cores. From microstructural observations, the increase is correlated with the changes in microstructural connectivity of the powder phase.

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