Effects of external reflector alignment in sensing applications of optical feedback in laser diodes

1996 ◽  
Vol 14 (12) ◽  
pp. 2672-2676 ◽  
Author(s):  
R.C. Addy ◽  
A.W. Palmer ◽  
K. Thomas ◽  
V. Grattan
Keyword(s):  
Optical Feedback ◽  
Laser Diodes ◽  
Sensing Applications

Suppression of Optical Feedback in Laser Diodes Using Multilayered Broad-band Ultra-low Reflective Facets-coating

2020 ◽  
Vol 12 (2) ◽  
pp. 02030-1-02030-5
Author(s):  
Sanjay J. Patel ◽  
◽  
Akshay Jariwala ◽  
C. J. Panchal ◽  
Vipul Kheraj ◽  
...  
Keyword(s):  
Optical Feedback ◽  
Broad Band ◽  
Laser Diodes

Microwave modulation of laser diodes with optical feedback

1991 ◽  
Vol 9 (4) ◽  
pp. 468-476 ◽  
Author(s):  
J. Helms ◽  
K. Petermann
Keyword(s):  
Optical Feedback ◽  
Laser Diodes ◽  
Microwave Modulation

Multidimensional displacement sensor using the optical feedback of laser diodes

1992 ◽  
Author(s):  
Jun-ichi Kato ◽  
Ichirou Yamaguchi ◽  
Nobuhiko Kikuchi ◽  
Shigeo Ozono
Keyword(s):  
Optical Feedback ◽  
Laser Diodes ◽  
Displacement Sensor

Low‐frequency intensity fluctuation in laser diodes with external optical feedback

1981 ◽  
Vol 38 (4) ◽  
pp. 217-220 ◽  
Author(s):  
Masahiko Fujiwara ◽  
Keiichi Kubota ◽  
Roy Lang
Keyword(s):  
Intensity Fluctuation ◽  
Optical Feedback ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Intensity

InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours

1997 ◽  
Vol 482 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
Optical Feedback ◽  
Laser Diodes ◽  
Continuous Wave Operation ◽  
Operating Current ◽  
Strained Layer Superlattice ◽  
Cladding Layers ◽  
Multi Quantum Well ◽  
Structure Laser

AbstractInGaN multi-quantum-well (MQW) structure laser diodes with A10.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10,000 hours under continuous-wave operation at 20°C. Under operation at a high temperature of 50°C, the lifetime was longer than 1,000 hours. The activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The relative intensity noise (RIN) less than -145 dB/Hz was obtained even at the 6% optical feedback using the high-frequency modulation of 600 MHz. The threshold carrier density of the InGaN MQW-structure LDs was estimated to be 3 × 1019/cm3 using a carrier lifetime of 1.8 ns.

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