scholarly journals A wavelength rerouting algorithm in wide-area all-optical networks

1996 ◽  
Vol 14 (6) ◽  
pp. 1218-1229 ◽  
Author(s):  
K.-C. Lee ◽  
V.O.K. Li
Keyword(s):  
Optical Networks ◽  
Wide Area ◽  
All Optical

A novel integrated-optic WDM cross-connect for wide area all optical networks

1993 ◽  
Vol 11 (3) ◽  
pp. 512-522 ◽  
Author(s):  
M. Tabiani ◽  
M. Kevehrad ◽  
M.I. Irshid
Keyword(s):  
Optical Networks ◽  
Wide Area ◽  
All Optical ◽  
Cross Connect

scholarly journals Signaling free localization of node failures in all-optical networks

2014 ◽  
Author(s):  
Janos Tapolcai ◽  
Lajos Ronyai ◽  
Eva Hosszu ◽  
Pin-Han Ho ◽  
Suresh Subramaniam
Keyword(s):  
Optical Networks ◽  
All Optical ◽  
Node Failures

All-optical dense WDM wide-area communication network

2002 ◽  
Author(s):  
S.C. Chan ◽  
Minghua Lu ◽  
S.S. Udpa ◽  
L. Udpa ◽  
D.W. Jacobson
Keyword(s):  
Communication Network ◽  
Wide Area ◽  
Dense Wdm ◽  
All Optical

scholarly journals All-optical dynamic tuning of local excitonic emission of monolayer MoS2 by integration with Ge2Sb2Te5

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2351-2359
Author(s):  
Hao Ouyang ◽  
Haitao Chen ◽  
Yuxiang Tang ◽  
Jun Zhang ◽  
Chenxi Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Optical Networks ◽  
Dominant Role ◽  
Laser Pulses ◽  
Coulomb Interactions ◽  
Optical Modulators ◽  
Dynamic Tuning ◽  
All Optical ◽  
Excitonic Emission

AbstractStrong quantum confinement and coulomb interactions induce tightly bound quasiparticles such as excitons and trions in an atomically thin layer of transitional metal dichalcogenides (TMDs), which play a dominant role in determining their intriguing optoelectronic properties. Thus, controlling the excitonic properties is essential for the applications of TMD-based devices. Here, we demonstrate the all-optical tuning of the local excitonic emission from a monolayer MoS2 hybridized with phase-change material Ge2Sb2Te5 (GST) thin film. By applying pulsed laser with different power on the MoS2/GST heterostructure, the peak energies of the excitonic emission of MoS2 can be tuned up to 40 meV, and the exciton/trion intensity ratio can be tuned by at least one order of magnitude. Raman spectra and transient pump-probe measurements show that the tunability originated from the laser-induced phase change of the GST thin film with charge transferring from GST to the monolayer MoS2. The dynamic tuning of the excitonic emission was all done with localized laser pulses and could be scaled readily, which pave a new way of controlling the excitonic emission in TMDs. Our findings could be potentially used as all-optical modulators or switches in future optical networks.

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