16×16 strictly nonblocking guided-wave optical switching system

1996 ◽  
Vol 14 (3) ◽  
pp. 352-358 ◽  
Author(s):  
E.J. Murphy ◽  
T.O. Murphy ◽  
A.F. Ambrose ◽  
R.W. Irvin ◽  
B.H. Lee ◽  
...  
Keyword(s):  
Optical Switching ◽  
Guided Wave ◽  
Switching System ◽  
Strictly Nonblocking

Self-routing planar network for guided-wave optical switching systems

1990 ◽  
Vol 26 (8) ◽  
pp. 520 ◽  
Author(s):  
H. Obara ◽  
S. Okamoto ◽  
H. Uematsu ◽  
H. Matsunaga
Keyword(s):  
Optical Switching ◽  
Guided Wave ◽  
Switching Systems ◽  
Planar Network

Fabrication of vertical digital silicon optical micromirrors on suspended electrode for guided-wave optical switching applications

2005 ◽  
Vol 123-124 ◽  
pp. 570-583 ◽  
Author(s):  
R. Guerre ◽  
C. Hibert ◽  
Y. Burri ◽  
Ph. Flückiger ◽  
Ph. Renaud
Keyword(s):  
Optical Switching ◽  
Guided Wave

Optomechanical design of a robust free-space optical switching system

1996 ◽  
Author(s):  
Daniel J. Reiley ◽  
Jose M. Sasian ◽  
Martin G. Beckman
Keyword(s):  
Free Space ◽  
Optical Switching ◽  
Switching System ◽  
Free Space Optical

scholarly journals GC-EDFA for a Burst Packet Mode Optical Switching System

2007 ◽  
Vol 11 (1) ◽  
pp. 44-48 ◽  
Author(s):  
Choong-Reol Yang ◽  
Whan-Woo Kim
Keyword(s):  
Optical Switching ◽  
Switching System

Multiple Quantum Well Heterostructures Showing Optical Nonlinearities at Low Intensity and Fast Recovery

1998 ◽  
Vol 07 (01) ◽  
pp. 37-45 ◽  
Author(s):  
L. Gastaldi ◽  
C. Rigo ◽  
D. Campi ◽  
L. Faustini ◽  
C. Coriasso ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Optical Power ◽  
Guided Wave ◽  
Multiple Quantum ◽  
Photogenerated Carrier ◽  
Fast Recovery ◽  
All Optical ◽  
All Optical Switching

This paper focuses on photogenerated carrier nonlinearities in InGaAs/InAlAs quantum wells (QWs) that use low optical power, display a relatively fast recovery time (280 ps down to 35 ps), and excellent optical properties in terms of the sharpness of the absorption edge. A guided-wave, all-optical switching device is demonstrated as an application, at a wavelength which is of interest to telecommunication systems (1.55 μm) and requires low control energy (<0.3 pJ/pulse). A key issue here is that the controlled introduction of defects in the QW heterostructures allows the time response to be fastened significantly without being detrimental to the performance of the device in terms of on-off contrast and switching energy. The preparation procedure is compatible with metalorganic-based growth techniques widespread in optoelectronics at 1.55 μm.

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