MSM waveguide photodetectors optimized for monolithic integration with high electron mobility transistors

M.H. Leary; J.M. Ballantyne

doi:10.1109/50.400720

MSM waveguide photodetectors optimized for monolithic integration with high electron mobility transistors

Journal of Lightwave Technology ◽

10.1109/50.400720 ◽

1995 ◽

Vol 13 (7) ◽

pp. 1514-1520 ◽

Cited By ~ 1

Author(s):

M.H. Leary ◽

J.M. Ballantyne

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Monolithic Integration ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment

Applied Physics Express ◽

10.7567/1882-0786/aafcd5 ◽

2019 ◽

Vol 12 (3) ◽

pp. 036502 ◽

Cited By ~ 1

Author(s):

Ronghui Hao ◽

Chi Sun ◽

Bin Fang ◽

Ning Xu ◽

Zhifu Tao ◽

...

Keyword(s):

Plasma Treatment ◽

Electron Mobility ◽

Hydrogen Plasma ◽

High Electron Mobility Transistors ◽

Monolithic Integration ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591482 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1650 ◽

Cited By ~ 20

Author(s):

B. R. Bennett ◽

A. S. Bracker ◽

R. Magno ◽

J. B. Boos ◽

R. Bass ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Monolithic Integration ◽

Material System ◽

High Electron ◽

High Electron Mobility ◽

Tunneling Diodes ◽

Electron Mobility Transistors ◽

Interband Tunneling

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Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors

International Electron Devices Meeting. Technical Digest ◽

10.1109/iedm.1996.553120 ◽

2002 ◽

Cited By ~ 3

Author(s):

A. Mahajan ◽

P. Fay ◽

M. Arafa ◽

G. Cueva ◽

I. Adesida

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Monolithic Integration ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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III-N heterostructures for monolithic integration of enhancement/depletion-mode high-electron-mobility transistors

Journal of Physics Conference Series ◽

10.1088/1742-6596/1482/1/012031 ◽

2020 ◽

Vol 1482 ◽

pp. 012031

Author(s):

D S Arteev ◽

A V Sakharov ◽

A E Nikolaev ◽

W V Lundin ◽

A F Tsatsulnikov

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Monolithic Integration ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors

Journal of Electronic Materials ◽

10.1007/s11664-016-4387-7 ◽

2016 ◽

Vol 45 (4) ◽

pp. 2092-2101 ◽

Cited By ~ 2

Author(s):

Chao Liu ◽

Yuefei Cai ◽

Huaxing Jiang ◽

Kei May Lau

Keyword(s):

Electron Mobility ◽

Light Emitting Diodes ◽

High Electron Mobility Transistors ◽

Monolithic Integration ◽

High Electron ◽

High Electron Mobility ◽

Light Emitting ◽

Electron Mobility Transistors

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

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Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108050 ◽

2021 ◽

pp. 108050

Author(s):

Maria Glória Caño de Andrade ◽

Luis Felipe de Oliveira Bergamim ◽

Braz Baptista Júnior ◽

Carlos Roberto Nogueira ◽

Fábio Alex da Silva ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si

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