A 1-V, 8-bit successive approximation ADC in standard CMOS process

2000 ◽  
Vol 35 (4) ◽  
pp. 642-646 ◽  
Author(s):  
S. Mortezapour ◽  
E.K.F. Lee
2011 ◽  
Vol 20 (01) ◽  
pp. 15-27 ◽  
Author(s):  
XIAN TANG ◽  
KONG PANG PUN

A novel switched-current successive approximation ADC is presented in this paper with high speed and low power consumption. The proposed ADC contains a new high-accuracy and power-efficient switched-current S/H circuit and a speed-improved current comparator. Designed and simulated in a 0.18-μm CMOS process, this 8-bit ADC achieves 46.23 dB SNDR at 1.23 MS/s consuming 73.19 μW under 1.2 V voltage supply, resulting in an ENOB of 7.38-bit and an FOM of 0.357 pJ/Conv.-step.


Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 830
Author(s):  
Chong-Cheng Huang ◽  
Guo-Ming Sung ◽  
Xiong Xiao ◽  
Shan-Hao Sung ◽  
Chao-Hung Huang

This paper presents a 10-bit 0.909-MHz 8-channel dual-mode successive approximation (SAR) analogue-to-digital converter (ADC) for brushless direct current (BLDC) motor drive, using a Taiwan Semiconductor Manufacturing (TSMC) 0.25 μm 1P3M Complementary Metal Oxide Semiconductor (CMOS) process. The sample-and-hold (S/H) circuit operates with two sampling modes. One is individually sampling eight channels in sequence with an S/H circuit and the other is sampling four channels simultaneously with four S/H circuits. All sampled data will be digitized with high-speed SAR ADC in time division multiplexing (TDM). A dynamic latch-type comparator is utilized to latch the output at an upper or lower level. The advantage of the designed comparator is that it performs with positive feedback to quickly complete the latch function. The double-tail latch-type architecture is utilized to mitigate the significant kickback effect by separating the pre-amplifier stage from the latch. By integrating an input NMOSFET with an input PMOSFET, the designed latch-type comparator can perform with full-swing input voltage. Measurements show that the signal-to-noise ratio (SNR), signal-to-noise-and-distortion ratio (SNDR), effective number of bits (ENOB), power consumption, and chip area are 50.56 dB, 57.03 dB, 8.11 bits, 833 μW, and 1.35 × 0.98 mm2, respectively. The main advantages of the proposed multichannel dual-mode SAR ADC are its low power consumption of 833 μW and high measured resolution of 8.11 bits.


2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.


2012 ◽  
Vol 47 (10) ◽  
pp. 2444-2453 ◽  
Author(s):  
Tao Jiang ◽  
Wing Liu ◽  
Freeman Y. Zhong ◽  
Charlie Zhong ◽  
Kangmin Hu ◽  
...  

Author(s):  
M. Fischer ◽  
M. Nagele ◽  
D. Eichner ◽  
C. Schollhorn ◽  
R. Strobel

2010 ◽  
Vol 18 (21) ◽  
pp. 22215 ◽  
Author(s):  
Gun-Duk Kim ◽  
Hak-Soon Lee ◽  
Chang-Hyun Park ◽  
Sang-Shin Lee ◽  
Boo Tak Lim ◽  
...  

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