An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications

1998 ◽  
Vol 33 (9) ◽  
pp. 1290-1296 ◽  
Author(s):  
T. Yoshimasu ◽  
M. Akagi ◽  
N. Tanba ◽  
S. Hara
Keyword(s):  
Power Amplifier ◽  
Low Voltage

Monolithic Low Voltage Power Amplifier for Portable Low Range Transceiver

1997 ◽  
Author(s):  
Femando Fortes ◽  
Maria Joao do Rosario ◽  
J. Costa Freire
Keyword(s):  
Power Amplifier ◽  
Low Voltage

scholarly journals A 2.5-GHz 1-V High Efficiency CMOS Power Amplifier IC with a Dual-Switching Transistor and Third Harmonic Tuning Technique

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 69 ◽  
Author(s):  
Taufiq Alif Kurniawan ◽  
Toshihiko Yoshimasu
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Low Voltage ◽  
Supply Voltage ◽  
Drain Current ◽  
Cmos Technology ◽  
Back Gate ◽  
Third Harmonic ◽  
Power Added Efficiency ◽  
Switching Transistor

This paper presents a 2.5-GHz low-voltage, high-efficiency CMOS power amplifier (PA) IC in 0.18-µm CMOS technology. The combination of a dual-switching transistor (DST) and a third harmonic tuning technique is proposed. The DST effectively improves the gain at the saturation power region when the additional gain extension of the secondary switching transistor compensates for the gain compression of the primary one. To achieve high-efficiency performance, the third harmonic tuning circuit is connected in parallel to the output load. Therefore, the flattened drain current and voltage waveforms are generated, which in turn reduce the overlapping and the dc power consumption significantly. In addition, a 0.5-V back-gate voltage is applied to the primary switching transistor to realize the low-voltage operation. At 1 V of supply voltage, the proposed PA has achieved a power added efficiency (PAE) of 34.5% and a saturated output power of 10.1 dBm.

Design of a Miniaturized Class F Power Amplifier Using Capacitor Loaded Transmission Lines

Frequenz ◽  
2020 ◽  
Vol 74 (3-4) ◽  
pp. 145-152
Author(s):  
Ali Pirasteh ◽  
Saeed Roshani ◽  
Sobhan Roshani
Keyword(s):  
Power Amplifier ◽  
Mobile Communications ◽  
Transmission Lines ◽  
Low Voltage ◽  
Good Choice ◽  
Band Frequency ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Measurement Results ◽  
Class F

AbstractIn this paper, a new method to decrease the dimensions of the microstrip structures and reducing the overall size of the class F amplifiers is presented. First, by using the PHEMT transistor with a conventional harmonic control circuit (HCC), a low-voltage class F amplifier in the L band frequency at the operating frequency of 1.75 GHz is introduced, which named primitive class F power amplifier. Then, this amplifier is optimized by using capacitor loaded transmission lines (CLTLs). The measurement results of the amplifier show that by using the CLTL structure, the overall size has been reduced 85% (0.23 λg × 0.17 λg). The maximum power-added efficiency (PAE) of the power amplifier is about 77.5 % and the power gain which has been reached to 18.33 dB. The desirable features of this power amplifier, along with its very small size, make this power amplifier a good choice to use for the global system for mobile communications.

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