Advanced integrated-circuit reliability simulation including dynamic stress effects

1992 ◽  
Vol 27 (3) ◽  
pp. 247-257 ◽  
Author(s):  
W.-J. Hsu ◽  
B.J. Sheu ◽  
S.M. Gowda ◽  
C.-G. Hwang
Keyword(s):  
Integrated Circuit ◽  
Dynamic Stress ◽  
Circuit Reliability ◽  
Stress Effects ◽  
Integrated Circuit Reliability

Sample Preparation of Aluminum Bridge Test Vehicles for Tem In-Situ Crystallographic Studies of Electromigration

1987 ◽  
Vol 115 ◽  
Author(s):  
W. E. Rhoden ◽  
J. V. Maskowitz ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Circuit Reliability ◽  
Test Vehicle ◽  
Aluminum Films ◽  
Current Densities ◽  
Integrated Circuit Reliability ◽  
A Current

IntroductionElectromigration in aluminum films has been identified as an increasing concern for integrated circuit reliability. Electromigration is the mass transport of atoms in a conductor under a current stress. Electromigration occurs in conductors experiencing current densities greater than 105 A/cm2 and is accelerated by high temperature. The damage to aluminum films manifests itself in the formation of voids, hillocks and whiskers along the conductor. This paper presents a test vehicle preparation procedure which can be used to investigate electromigration.

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