Low noise, low-distortion front-end IC for 1.1-V paging receiver

1991 ◽  
Vol 37 (3) ◽  
pp. 578-584 ◽  
Author(s):  
S. Tanaka ◽  
A. Nakajima ◽  
A. Nakagoshi ◽  
K. Washio ◽  
K. Takei ◽  
...  
Keyword(s):  
Author(s):  
S. Tanaka ◽  
A. Nakajima ◽  
A. Nakagoshi ◽  
K. Washio ◽  
K. Takei ◽  
...  
Keyword(s):  

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2662
Author(s):  
José A. López-Pérez ◽  
Félix Tercero-Martínez ◽  
José M. Serna-Puente ◽  
Beatriz Vaquero-Jiménez ◽  
María Patino-Esteban ◽  
...  

This paper shows a simultaneous tri-band (S: 2.2–2.7 GHz, X: 7.5–9 GHz and Ka: 28–33 GHz) low-noise cryogenic receiver for geodetic Very Long Baseline Interferometry (geo-VLBI) which has been developed at Yebes Observatory laboratories in Spain. A special feature is that the whole receiver front-end is fully coolable down to cryogenic temperatures to minimize receiver noise. It was installed in the first radio telescope of the Red Atlántica de Estaciones Geodinámicas y Espaciales (RAEGE) project, which is located in Yebes Observatory, in the frame of the VLBI Global Observing System (VGOS). After this, the receiver was borrowed by the Norwegian Mapping Autorithy (NMA) for the commissioning of two VGOS radiotelescopes in Svalbard (Norway). A second identical receiver was built for the Ishioka VGOS station of the Geospatial Information Authority (GSI) of Japan, and a third one for the second RAEGE VGOS station, located in Santa María (Açores Archipelago, Portugal). The average receiver noise temperatures are 21, 23, and 25 Kelvin and the measured antenna efficiencies are 70%, 75%, and 60% in S-band, X-band, and Ka-band, respectively.


2013 ◽  
Vol 475-476 ◽  
pp. 1633-1637
Author(s):  
Seung Yong Bae ◽  
Jong Do Lee ◽  
Eun Ju Choe ◽  
Gil Cho Ahn

This paper presents a low distortion analog front-end (AFE) circuit to process electret microphone output signal. A source follower is employed for the input buffer to interface electret microphone directly to the IC with level shifting. A single-ended to differential converter with output common-mode control is presented to compensate the common-mode variation resulted from gate to source voltage variation in the source follower. A replica stage is adopted to control the output bias voltage of the single-ended to differential converter. The prototype AFE circuit fabricated in a 0.35μm CMOS technology achieves 68.2dB peak SNDR and 79.9dB SFDR over an audio signal bandwidth of 20kHz with 2.5V supply while consuming 1.05mW.


2011 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Srdjan Glisic ◽  
J. Christoph Scheytt ◽  
Yaoming Sun ◽  
Frank Herzel ◽  
Ruoyu Wang ◽  
...  

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.


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