A compact-disc analog-to-digital front-end in BiCMOS technology

2000 ◽  
Vol 46 (2) ◽  
pp. 343-352 ◽  
Author(s):  
A. Baschirotto ◽  
G. Brasca ◽  
V. Colonna ◽  
P. Cusinato ◽  
G. Gandolfi
2011 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Srdjan Glisic ◽  
J. Christoph Scheytt ◽  
Yaoming Sun ◽  
Frank Herzel ◽  
Ruoyu Wang ◽  
...  

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.


Author(s):  
Mantas Sakalas ◽  
Niko Joram ◽  
Frank Ellinger

Abstract This study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$ .


2018 ◽  
Vol 98 (3) ◽  
pp. 465-476
Author(s):  
Raju Ahamed ◽  
Mikko Varonen ◽  
Jan Holmberg ◽  
Dristy Parveg ◽  
Mikko Kantanen ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
Markus Allén ◽  
Toni Levanen ◽  
Jaakko Marttila ◽  
Mikko Valkama

In modern wideband communication receivers, the large input-signal dynamics is a fundamental problem. Unintentional signal clipping occurs, if the receiver front-end with the analog-to-digital interface cannot respond to rapidly varying conditions. This paper discusses digital postprocessing compensation of such unintentional clipping in multiband OFDMA receivers. The proposed method iteratively mitigates the clipping distortion by exploiting the symbol decisions. The performance of the proposed method is illustrated with various computer simulations and also verified by concrete laboratory measurements with commercially available analog-to-digital hardware. It is shown that the clipping compensation algorithm implemented in a turbo decoding OFDM receiver is able to remove almost all the clipping distortion even under significant clipping in fading channel circumstances. That is to say, it is possible to nearly recover the receiver performance to the level, which would be achieved in the equivalent nonclipped situation.


Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 253
Author(s):  
Dong Wang ◽  
Jian Luan ◽  
Xuan Guo ◽  
Lei Zhou ◽  
Danyu Wu ◽  
...  

A 5 GS/s 8-bit analog-to-digital converter (ADC) implemented in 0.18 μm SiGe BiCMOS technology has been demonstrated. The proposed ADC is based on two-channel time-interleaved architecture, and each sub-ADC employs a two-stage cascaded folding and interpolating topology of radix-4. An open loop track-and-hold amplifier with enhanced linearity is designed to meet the dynamic performance requirement. The on-chip self-calibration technique is introduced to compensate the interleaving mismatches between two sub-ADCs. Measurement results show that the spurious free dynamic range (SFDR) stays above 44.8 dB with a peak of 53.52 dB, and the effective number of bits (ENOB) is greater than 5.8 bit with a maximum of 6.97 bit up to 2.5 GS/s. The ADC exhibits a differential nonlinearity (DNL) of -0.31/+0.23 LSB (least significant bit) and an integral nonlinearity (INL) of -0.68/+0.68 LSB, respectively. The chip occupies an area of 3.9 × 3.6 mm2, consumes a total power of 2.8 W, and achieves a figure of merit (FoM) of 10 pJ/conversion step.


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