Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

2001 ◽  
Vol 37 (8) ◽  
pp. 1050-1058 ◽  
Author(s):  
A. Fiore ◽  
U. Oesterle ◽  
R.P. Stanley ◽  
R. Houdre ◽  
F. Lelarge ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gallium Arsenide

scholarly journals Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
G. Sallen ◽  
S. Kunz ◽  
T. Amand ◽  
L. Bouet ◽  
T. Kuroda ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Gallium Arsenide ◽  
Zero Magnetic Field ◽  
Nuclear Magnetization

Nanosize Silicon and Gallium Arsenide Particles Left After Stopping Dissolution in Molten Glass

1992 ◽  
Vol 272 ◽  
Author(s):  
Li-Chi Liu ◽  
Subhash H. Risbud
Keyword(s):  
Quantum Dots ◽  
Gallium Arsenide ◽  
Quantum Confinement ◽  
Molten Glass ◽  
Prior Work ◽  
Base Glass ◽  
Pure Silicon ◽  
Additional Base ◽  
Green Photoluminescence ◽  
Absorption Features

ABSTRACTPowders of pure silicon and gallium arsenide were reacted with molten silicate glass of a composition used in our prior work on CdS and CdTe quantum dots in glass [1–4]. After the Si or GaAs agglomerated particles had reacted with the melt for an hour, the material was solidified to obtain a gray-black glass. Ground powders of this glass were again mixed with additional base glass powders to dilute the concentration of the semiconductor, remelted, and cast into glass. Samples of silicon-in-glass showing green photoluminescence peaked at 530 nm were obtained. The GaAs-in-glass samples show absorption features in the optical spectra which suggest the possibility of quantum confinement.

Phonon emission by optically pumped indium arsenide quantum dots in gallium arsenide

2002 ◽  
Vol 316-317 ◽  
pp. 198-201 ◽  
Author(s):  
A.J. Kent ◽  
A.V. Akimov ◽  
S.A. Cavill ◽  
R.J. Bellingham ◽  
M. Henini
Keyword(s):  
Quantum Dots ◽  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Optically Pumped ◽  
Phonon Emission

scholarly journals Эпитаксиальные квантовые точки InGaAs в матрице Al-=SUB=-0.29-=/SUB=-Ga-=SUB=-0.71-=/SUB=-As: интенсивность и кинетика люминесценции в ближнем поле серебряных наночастиц

2019 ◽  
Vol 126 (5) ◽  
pp. 573
Author(s):  
А.Н. Косарев ◽  
В.В. Чалдышев ◽  
А.А. Кондиков ◽  
Т.А. Вартанян ◽  
Н.А. Торопов ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silver Nanoparticles ◽  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Molecular Beam ◽  
Thermal Evaporation ◽  
Photoluminescence Spectra ◽  
Vacuum Thermal Evaporation ◽  
Plasmon Resonances ◽  
Kinetics Of

AbstractQuantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.

Indium Gallium Arsenide Based Non-Volatile Memory Devices with Site-Specific Self-Assembled Germanium Quantum Dot Gate

2010 ◽  
Vol 1250 ◽  
Author(s):  
Pik-Yiu Chan ◽  
Mukesh Gogna ◽  
Ernesto Suarez ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Field Effect Transistors ◽  
Memory Device ◽  
Floating Gate ◽  
Gate Insulator ◽  
Non Volatile Memory ◽  
Indium Gallium ◽  
Volatile Memory

AbstractThis paper presents the implementation of indium gallium arsenide field-effect transistors (InGaAs FETs) as non-volatile memory using lattice-matched II-VI gate insulator and quantum dots of GeOx-cladded Ge as the floating gate. Studies have been done to show the ability of II-VI materials to act as a tunneling gate material for InGaAs based FETs, and GeOx-cladded Ge quantum dots having the ability to store charges in the floating gate of a memory device. Proposed structure of the InGaAs device is presented.

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