High-speed and ultralow-chirp 11.55 mu m multiquantum well lambda /4-shifted DFB lasers

1991 ◽  
Vol 27 (6) ◽  
pp. 1705-1713 ◽  
Author(s):  
K. Uomi ◽  
T. Tsuchiya ◽  
H. Nakano ◽  
M. Aoki ◽  
M. Suzuki ◽  
...  
Keyword(s):  
High Speed ◽  
Multiquantum Well

Ultralow chirp and high-speed 1.55 mu m multiquantum well lambda /4-shifted DFB lasers

1990 ◽  
Vol 2 (4) ◽  
pp. 229-230 ◽  
Author(s):  
K. Uomi ◽  
S. Sasaki ◽  
T. Tsuchiya ◽  
H. Nakano ◽  
N. Chinone
Keyword(s):  
High Speed ◽  
Multiquantum Well

Barrier strain influence on the high-speed properties of compressively strained InGaAsP multiquantum-well laser structures

1997 ◽  
Vol 3 (2) ◽  
pp. 330-335 ◽  
Author(s):  
S. Bouchoule ◽  
C. Kazmierski ◽  
D. Mathoorasing ◽  
A. Ougazzaden ◽  
J.-Y. Marzin
Keyword(s):  
High Speed ◽  
Multiquantum Well

High-Speed Multiquantum Well Avalanche Photodiodes

1988 ◽  
Author(s):  
Y. Zebda ◽  
J. Hinckley ◽  
P. Bhattacharya ◽  
J. Singh ◽  
F-Y. Juang
Keyword(s):  
High Speed ◽  
Avalanche Photodiodes ◽  
Multiquantum Well

Low-threshold and high-speed 1.5 μm compressive-strained multiquantum well four-wavelength distributed-feedback laser arrays

1991 ◽  
Vol 27 (12) ◽  
pp. 1040 ◽  
Author(s):  
C.E. Zah ◽  
K.W. Cheung ◽  
S.G. Menocal ◽  
R. Bhat ◽  
M.Z. Iqbal ◽  
...  
Keyword(s):  
High Speed ◽  
Distributed Feedback ◽  
Distributed Feedback Laser ◽  
Laser Arrays ◽  
Low Threshold ◽  
Multiquantum Well

Extremely reduced nonlinearK-factor in high-speed strained layer multiquantum well DFB lasers

1991 ◽  
Vol 27 (10) ◽  
pp. 875-876 ◽  
Author(s):  
Y. Hirayama ◽  
M. Morinaga ◽  
N. Suzuki ◽  
M. Nakamura
Keyword(s):  
High Speed ◽  
Strained Layer ◽  
Multiquantum Well

InGaAs/InP Multiquantum well Structures Grown by Trichloride Vapor Phase Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
K. W. Wang ◽  
V. D. Mattera ◽  
K. Tai ◽  
S. N. G. Chu ◽  
D. D. Roccasecca ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
Stark Effect ◽  
Optical Modulators ◽  
Double Crystal ◽  
Cross Sectional ◽  
High Modulation ◽  
Transmission Electron ◽  
Device Applications ◽  
Multiquantum Well

AbstractLong wavelength (l.3pm<X<l.551un) InGaAs/InP multiquantum well (MQW) PIN structures in which the quantum confined Stark effect can be observed, are of particular interest because of their potential for high modulation contrast ratios and high speed operation. The chemistry of trichloride VPE lends itself to the growth of high purity InGaAsP heterostructures which are essential for the realization of high performance optical modulators and switches. In this study, we investigate the application of multi-frit trichloride VPE for the highly uniform epitaxial growth of InGaAs/InP MQW structures on two-inch InP substrates for advanced photonic device applications. The growth of MQW structures with various well thicknesses was studied as was the effect of substrate orientation. The structures have been characterized by infrared absorption and photoluminescence spectroscopy, cross-sectional transmission electron microscopy and double crystal x-ray diffraction.

High‐speed GaAs/AlGaAs photoconductive detector using ap‐modulation‐doped multiquantum well structure

1986 ◽  
Vol 48 (16) ◽  
pp. 1096-1097 ◽  
Author(s):  
K. Kaede ◽  
Y. Arakawa ◽  
P. Derry ◽  
J. Paslaski ◽  
A. Yariv
Keyword(s):  
High Speed ◽  
Photoconductive Detector ◽  
Multiquantum Well
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