High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

1991 ◽  
Vol 27 (6) ◽  
pp. 1426-1439 ◽  
Author(s):  
P.J.A. Thijs ◽  
L.F. Tiemeijer ◽  
P.I. Kuindersma ◽  
J.J.M. Binsma ◽  
T. Van Dongen
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Strained Quantum Well

High performance 634 nm InGaP/InGaAlP strained quantum well lasers

1991 ◽  
Vol 27 (17) ◽  
pp. 1553 ◽  
Author(s):  
C.J. Chang-Hasnain ◽  
R. Bhat ◽  
M.A. Koza
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Strained Quantum Well

High-performance 670-nm AlGaInP/GaInP visible strained quantum well lasers

1998 ◽  
Vol 45 (4) ◽  
pp. 763-767 ◽  
Author(s):  
Y.-K. Su ◽  
W.-L. Li ◽  
S.-J. Chang ◽  
C.S. Chang ◽  
C.S. Tsai
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Strained Quantum Well

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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