Analysis and numerical simulation of eigenmode characteristics for semiconductor lasers with an equilateral triangle micro-resonator

2001 ◽  
Vol 37 (1) ◽  
pp. 100-107 ◽  
Author(s):  
Yong-Zhen Huang ◽  
Wei-Hua Guo ◽  
Qi-Ming Wang
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Lasers ◽  
Equilateral Triangle ◽  
Micro Resonator

Numerical simulation of modal gain in electrically pumped organic semiconductor lasers

2004 ◽  
Author(s):  
Christof Pflumm ◽  
Christian Karnutsch ◽  
Martina Gerken ◽  
Uli Lemmer
Keyword(s):  
Numerical Simulation ◽  
Semiconductor Lasers ◽  
Organic Semiconductor ◽  
Modal Gain ◽  
Electrically Pumped

PHASE SYNCHRONIZATION OF PERIODIC AND CHAOTIC STATES INDUCED BY EXTERNAL OPTICAL INJECTION IN SEMICONDUCTOR LASERS

2000 ◽  
Vol 10 (10) ◽  
pp. 2441-2446 ◽  
Author(s):  
E. LARIONTSEV
Keyword(s):  
Numerical Simulation ◽  
Periodic Solutions ◽  
Semiconductor Lasers ◽  
Phase Synchronization ◽  
Period Doubling ◽  
Injection Locking ◽  
Optical Injection ◽  
Frequency Detuning ◽  
Stable Periodic ◽  
Unstable Part

We present results on a numerical simulation of phase synchronization of the periodic and chaotic states induced by optical injection in a semiconductor laser. Such states occur in an unstable part of the injection locking region. We find two branches of the stable periodic solutions (bistability) which are synchronized by the injected signal. We show that phase synchronization of the periodic states exists in the truncated period-doubling cascade to chaos and is maintained in some region of the chaotic states. We present a mapping of the region of synchronized chaotic states as a function of the amplitude and frequency detuning of the external optical injection.

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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