The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

2000 ◽  
Vol 36 (11) ◽  
pp. 1272-1279 ◽  
Author(s):  
G.T. Liu ◽  
A. Stintz ◽  
H. Li ◽  
T.C. Newell ◽  
A.L. Gray ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Dot Lasers

Gain, index variation, and linewidth-enhancement factor in 980-nm quantum-well and quantum-dot lasers

2005 ◽  
Vol 41 (2) ◽  
pp. 117-126 ◽  
Author(s):  
D. Rodriguez ◽  
I. Esquivias ◽  
S. Deubert ◽  
J.P. Reithmaier ◽  
A. Forchel ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Enhancement Factor ◽  
Quantum Dot Lasers ◽  
Linewidth Enhancement Factor ◽  
Index Variation ◽  
Linewidth Enhancement

scholarly journals Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

2021 ◽  
Vol 8 ◽  
Author(s):  
Jia-Jian Chen ◽  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Laser Source ◽  
Quantum Dot Lasers ◽  
Optical Isolator ◽  
Quantum Dot Laser ◽  
On Chip ◽  
Inas Quantum Dot

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

Comparison of Lasing Characteristics of GaInNAs Quantum Dot Lasers and GaInNAs Quantum Well Lasers

2005 ◽  
Vol 891 ◽  
Author(s):  
Chongyang Y. Liu ◽  
Soon Fatt Yoon ◽  
Zhongzhe Z. Sun
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Molecular Beam ◽  
Cavity Length ◽  
Characteristic Temperature ◽  
Single Layer ◽  
Quantum Dot Lasers ◽  
Temperature Dependent ◽  
Single Quantum Well ◽  
High Temperature Operation

ABSTRACTSelf-assembled GaInNAs/GaAsN single layer quantum dot (QD) lasers grown using solid source molecular beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. High-temperature operation up to 65°C was demonstrated from an unbonded GaInNAs QD laser (50 × 1060 μm2), with high characteristic temperature (T0) of 79.4 K in the temperature range of 10-60°C. For comparison, temperature-dependent operation has also been studied on the GaInNAs single quantum well (SQW) lasers. Unlike the relation between the cavity length and T0 in GaInNAs SQW lasers, longer-cavity GaInNAs QD laser (50 × 1700 μm2) showed lower T0 of 65.1 K, which is presumably believed due to the nonuniformity of the GaInNAs QD layer.

In As/GaAs quantum dot lasers with dots in an asymmetric quantum well structure

2006 ◽  
Vol 376-377 ◽  
pp. 886-889 ◽  
Author(s):  
W.J. Choi ◽  
J.D. Song ◽  
J.I. Lee ◽  
K.C. Kim ◽  
T.G. Kim
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Dot Lasers ◽  
Quantum Well Structure ◽  
Asymmetric Quantum ◽  
Gaas Quantum Dot

Reliability of quantum well and quantum dot lasers for silicon photonics (invited)

2017 ◽  
Author(s):  
Robert W. Herrick ◽  
Daehwan Jung ◽  
Alan Liu ◽  
Justin Norman ◽  
Catherine Jan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Silicon Photonics ◽  
Quantum Dot Lasers
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