Tunable, high-power, subpicosecond blue-green dye laser system with a two-stage dye amplifier

1991 ◽  
Vol 27 (5) ◽  
pp. 1221-1227 ◽  
Author(s):  
T.E. Sharp ◽  
C.B. Dane ◽  
D. Barber ◽  
F.K. Tittel ◽  
P.J. Wisoff ◽  
...  
Keyword(s):  
2012 ◽  
Vol 12 (3) ◽  
pp. 648-653 ◽  
Author(s):  
Jin Woo Yoon ◽  
Seong Ku Lee ◽  
Tae Jun Yu ◽  
Jae Hee Sung ◽  
Tae Moon Jeong ◽  
...  

1989 ◽  
Vol 14 (1) ◽  
pp. 42 ◽  
Author(s):  
M. D. Perry ◽  
J. Weston ◽  
R. Ettlebrick ◽  
O. L. Landen

1988 ◽  
Vol 5 (8) ◽  
pp. 1573 ◽  
Author(s):  
M. M. Murnane ◽  
R. W. Falcone
Keyword(s):  

2010 ◽  
Vol 69 (14) ◽  
pp. 1301-1309
Author(s):  
V. P. Pelipenko ◽  
P.G. Dalchenko ◽  
M. I. Dzyubenko
Keyword(s):  

2018 ◽  
pp. 53-57 ◽  
Author(s):  
G. G. Savenkov ◽  
V. P. Razinkin ◽  
A. D. Mekhtiev

Applications of modern terminal loads and its relevant disadvantages are described in this paper. The decomposing method of wideband microwave high power microstrip loads design is proposed in this paper with purpose of matching quality improving. Multiple extension of multistage load bandwidth is provided by using of external matching circuit and internal matching inductive elements. The maximum reachable bandwidth of multistage load is estimated and optimal values of mathing circuit elements are founded on basis of equivalent lumped scheme. The topology of microstrip two-stage high power microwave load is developed and its frequency response, calculated via numeric electrodynamic modelling method is outlined in the paper. Modelling results show good matching quality of considered load at the frequency band below 3,5 GHz.


CPEM 2010 ◽  
2010 ◽  
Author(s):  
K. S. Lee ◽  
S. E. Park ◽  
T. Y. Kwon ◽  
S. B. Lee ◽  
J. Kim
Keyword(s):  

1973 ◽  
Vol 7 (3) ◽  
pp. 176-177 ◽  
Author(s):  
C.V. Shank ◽  
J. Edighoffer ◽  
A. Dienes ◽  
E.P. Ippen

2018 ◽  
Vol 7 (1-2) ◽  
pp. 23-31 ◽  
Author(s):  
Hao Liu ◽  
Lars Jensen ◽  
Ping Ma ◽  
Detlev Ristau

AbstractAtomic layer deposition (ALD) facilitates the deposition of coatings with precise thickness, high surface conformity, structural uniformity, and nodular-free structure, which are properties desired in high-power laser coatings. ALD was studied to produce uniform and stable Al2O3and HfO2single layers and was employed to produce anti-reflection coatings for the harmonics (1ω, 2ω, 3ω, and 4ω) of the Nd:YAG laser. In order to qualify the ALD films for high-power laser applications, the band gap energy, absorption, and element content of single layers were characterized. The damage tests of anti-reflection coatings were carried out with a laser system operated at 1ω, 2ω, 3ω, and 4ω, respectively. The damage mechanism was discussed by analyzing the damage morphology and electric field intensity difference. ALD coatings exhibit stable growth rates, low absorption, and rather high laser-induced damage threshold (LIDT). The LIDT is limited by HfO2as the employed high-index material. These properties indicate the high versatility of ALD films for applications in high-power coatings.


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