Tunneling time asymmetry in semiconductor heterostructures

1999 ◽  
Vol 35 (12) ◽  
pp. 1887-1893 ◽  
Author(s):  
D. Dragoman
Keyword(s):  
Semiconductor Heterostructures ◽  
Tunneling Time ◽  
Time Asymmetry

Tunneling-time asymmetry in resonant quantum structures

1996 ◽  
Vol 32 (7) ◽  
pp. 1150-1154 ◽  
Author(s):  
D. Dragoman ◽  
M. Dragoman
Keyword(s):  
Quantum Structures ◽  
Tunneling Time ◽  
Time Asymmetry

Tunneling time of long-wavelength phonons through semiconductor heterostructures

2005 ◽  
Vol 71 (3) ◽  
Author(s):  
Diosdado Villegas ◽  
Fernando de León-Pérez ◽  
Rolando Pérez-Alvarez
Keyword(s):  
Semiconductor Heterostructures ◽  
Tunneling Time ◽  
Long Wavelength

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Light-Induced Drift of Quantum-Confined Electrons in Semiconductor Heterostructures

1990 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Thomas F. George
Keyword(s):  
Semiconductor Heterostructures ◽  
Quantum Confined

Tunneling-time properties in type II quantum resonant structures

1996 ◽  
Vol 32 (11) ◽  
pp. 1932-1936 ◽  
Author(s):  
D. Dragoman ◽  
M. Dragoman
Keyword(s):  
Tunneling Time ◽  
Type Ii ◽  
Resonant Structures

scholarly journals Faraday and Kerr Effects in Right and Left-Handed Films and Layered Materials

2020 ◽  
Vol 59 (1) ◽  
pp. 243-251
Author(s):  
Josh Lofy ◽  
Vladimir Gasparian ◽  
Zhyrair Gevorkian ◽  
Esther Jódar
Keyword(s):  
Kerr Effect ◽  
Tunneling Time ◽  
The Real ◽  
Left Handed ◽  
Faraday Rotation Angle ◽  
Time Problem ◽  
Kerr Angle ◽  
Polarization Of Light ◽  
Effect Of Light ◽  
Forbidden Gap

AbstractIn the present work, we study the rotations of the polarization of light propagating in right and left-handed films and layered structures. Through the use of complex values representing the rotations we analyze the transmission (Faraday effect) and reflections (Kerr effect) of light. It is shown that the real and imaginary parts of the complex angle of Faraday and Kerr rotations are odd and even functions for the refractive index n, respectively. In the thin film case with left-handed materials there are large resonant enhancements of the reflected Kerr angle that could be obtained experimentally. In the magnetic clock approach, used in the tunneling time problem, two characteristic time components are related to the real and imaginary portions of the complex Faraday rotation angle . The complex angle at the different propagation regimes through a finite stack of alternating right and left-handed materials is analyzed in detail. We found that, in spite of the fact that Re(θ) in the forbidden gap is almost zero, the Im(θ) changes drastically in both value and sign.

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