High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy
1997 ◽
Vol 33
(12)
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pp. 2266-2276
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Keyword(s):
Keyword(s):
1999 ◽
Vol 9
(1)
◽
pp. 28-30
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Keyword(s):
1987 ◽
Keyword(s):
1994 ◽
Vol 136
(1-4)
◽
pp. 310-314
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