Influence of injection-current noise on the spectral characteristics of semiconductor lasers

W.H. Burkett;  Baolong Lu;  Min Xiao

doi:10.1109/3.641327

Influence of injection-current noise on the spectral characteristics of semiconductor lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.641327 ◽

1997 ◽

Vol 33 (11) ◽

pp. 2111-2118 ◽

Cited By ~ 11

Author(s):

W.H. Burkett ◽

Baolong Lu ◽

Min Xiao

Keyword(s):

Semiconductor Lasers ◽

Spectral Characteristics ◽

Injection Current ◽

Current Noise

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Spectral characteristics of semiconductor lasers with optical feedback

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1982.1071581 ◽

1982 ◽

Vol 18 (4) ◽

pp. 555-564 ◽

Cited By ~ 179

Author(s):

L. Goldberg ◽

H. Taylor ◽

A. Dandridge ◽

J. Weller ◽

R. Miles

Keyword(s):

Semiconductor Lasers ◽

Optical Feedback ◽

Spectral Characteristics

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Dynamics and spectral characteristics of quantum dot semiconductor lasers under optical injection-locking

Physica Scripta ◽

10.1088/1402-4896/ab42a6 ◽

2020 ◽

Vol 95 (2) ◽

pp. 025802

Author(s):

Hamid Mirdadashi ◽

Mohammad Mohsen Sheikhey ◽

Hamed Baghban

Keyword(s):

Quantum Dot ◽

Semiconductor Lasers ◽

Spectral Characteristics ◽

Injection Locking ◽

Optical Injection ◽

Optical Injection Locking

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Simulations of light—current and spectral characteristics of InGaAlAs/InP semiconductor lasers

Quantum Electronics ◽

10.1070/qe2006v036n10abeh013278 ◽

2006 ◽

Vol 36 (10) ◽

pp. 918-924 ◽

Cited By ~ 8

Author(s):

Andrei V Ivanov ◽

V D Kurnosov ◽

K V Kurnosov ◽

V I Romantsevich ◽

Yu L Ryaboshtan ◽

...

Keyword(s):

Semiconductor Lasers ◽

Spectral Characteristics

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Spectral characteristics of semiconductor lasers under strong optical injection

International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301) ◽

10.1109/mwp.1999.819681 ◽

2003 ◽

Author(s):

Young-Kwang Seo ◽

Woo-Young Choi

Keyword(s):

Semiconductor Lasers ◽

Spectral Characteristics ◽

Optical Injection

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Influence of the injection current dependence of gain suppression on the nonlinear dynamics of semiconductor lasers

Applied Physics Letters ◽

10.1063/1.1363698 ◽

2001 ◽

Vol 78 (16) ◽

pp. 2384-2386 ◽

Cited By ~ 6

Author(s):

C. G. Lim ◽

S. Iezekiel ◽

C. M. Snowden

Keyword(s):

Nonlinear Dynamics ◽

Semiconductor Lasers ◽

Injection Current ◽

Current Dependence

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Characteristics between Injection Current and Optical Power of Strained-Layer Multiple Quantum Well Semiconductor Lasers Coupled to an Externally Distributed Fiber Bragg Grating Reflector.

The Review of Laser Engineering ◽

10.2184/lsj.27.121 ◽

1999 ◽

Vol 27 (2) ◽

pp. 121-126

Author(s):

Hideyuki NASU ◽

Hideyuki OMURA

Keyword(s):

Quantum Well ◽

Fiber Bragg Grating ◽

Semiconductor Lasers ◽

Multiple Quantum Well ◽

Optical Power ◽

Injection Current ◽

Bragg Grating ◽

Multiple Quantum ◽

Strained Layer

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Interband Semiconductor Lasers and LEDs

Bands and Photons in III-V Semiconductor Quantum Structures ◽

10.1093/oso/9780198767275.003.0012 ◽

2020 ◽

pp. 421-490

Author(s):

Vurgaftman Igor

Keyword(s):

Quantum Wells ◽

Semiconductor Lasers ◽

High Speed ◽

Diode Lasers ◽

Spectral Characteristics ◽

Threshold Current ◽

Threshold Current Density ◽

Light Emitting ◽

Speed Modulation ◽

Interband Cascade Lasers

This chapter discusses the operation of conventional diode lasers based on quantum wells and quantum dots as a function of emission wavelength. The recombination processes that control the threshold current density of the devices are described in detail, including recombination at defects, radiative, and Auger recombination. The high-speed modulation and spectral characteristics of semiconductor lasers are also discussed. It continues by illustrating why interband cascade lasers can outperform diode lasers at mid-infrared wavelengths and describing their design and operating characteristics in detail. On the short-wavelength side of the spectrum, the nitride lasers and the factors that limit their performance are discussed. In addition to lasers, the principles underlying light-emitting diodes (LEDs) are outlined, and the proposed mechanisms for improving the extraction of the light from high-index semiconductor materials are described. The chapter concludes with a discussion of the performance of semiconductor optical amplifiers designed to amplify a weak input signal.

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