A quantitative comparison of the classical rate-equation model with the carrier heating model on dynamics of the quantum-well laser: the role of carrier energy relaxation, electron-hole interaction, and Auger effect

1997 ◽  
Vol 33 (8) ◽  
pp. 1350-1359 ◽  
Author(s):  
Jian Wang ◽  
H.C. Schweizer
Keyword(s):  
Equation Model ◽  
Quantitative Comparison ◽  
Electron Hole ◽  
Carrier Heating ◽  
Quantum Well Laser ◽  
Carrier Energy ◽  
Heating Model ◽  
Auger Effect ◽  
Hole Interaction

scholarly journals Role of microstructure in the electron–hole interaction of hybrid lead halide perovskites

2015 ◽  
Vol 9 (10) ◽  
pp. 695-701 ◽  
Author(s):  
Giulia Grancini ◽  
Ajay Ram Srimath Kandada ◽  
Jarvist M. Frost ◽  
Alex J. Barker ◽  
Michele De Bastiani ◽  
...  
Keyword(s):  
Electron Hole ◽  
Halide Perovskites ◽  
Lead Halide ◽  
Hole Interaction

Role of localized electrons in electron-hole interaction: The case of SrTiO3

2013 ◽  
Vol 87 (23) ◽  
Author(s):  
Lorenzo Sponza ◽  
Valérie Véniard ◽  
Francesco Sottile ◽  
Christine Giorgetti ◽  
Lucia Reining
Keyword(s):  
Electron Hole ◽  
Hole Interaction ◽  
Localized Electrons

The Luminescence Mechanism of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
P. D. J. Calcott ◽  
K. J. Nash ◽  
L. T. Canham ◽  
M. J. Kane ◽  
D. Brumhead
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Crystalline Silicon ◽  
Optical Transitions ◽  
Electron Hole ◽  
Satellite Structure ◽  
Coupling Strengths ◽  
Highly Porous ◽  
Hole Interaction

ABSTRACTWe report resonantly excited photoluminescence (PL) spectroscopy of highly porous silicon. In the PL spectra we observe satellite structure due to the participation of momentum-conserving phonons in the optical transitions. The momentum-conserving role of these phonons, together with their energies and relative coupling strengths, demonstrate beyond doubt that crystalline silicon, which has already been shown to be the dominant constituent of unoxidised porous silicon, also forms the luminescent material. We show that the theory of quantum confinement in crystalline silicon wires can explain our results and those of other experiments, if the electron-hole interaction, andthe localisation of carriers by fluctuations in wire width, are taken into account.

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