Modeling of quantum-well lasers for computer-aided analysis of optoelectronic integrated circuits

1990 ◽  
Vol 26 (7) ◽  
pp. 1206-1216 ◽  
Author(s):  
D.S. Gao ◽  
S.M. Kang ◽  
R.P. Bryan ◽  
J.J. Coleman
Keyword(s):  
Integrated Circuits ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Optoelectronic Integrated Circuits ◽  
Computer Aided Analysis ◽  
Computer Aided

A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits

1993 ◽  
Vol 29 (1) ◽  
pp. 136-149 ◽  
Author(s):  
S.K. Sargood ◽  
G.W. Taylor ◽  
P.R. Claisse ◽  
T. Vang ◽  
P. Cooke ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Quantum Well ◽  
Optoelectronic Integrated Circuits ◽  
Inversion Channel

Computer-Aided Analysis of RFI Effects in Digital Integrated Circuits

1979 ◽  
Vol EMC-21 (4) ◽  
pp. 291-297 ◽  
Author(s):  
James Whalen ◽  
Joseoh Tront ◽  
Curtis Larson ◽  
James Roe
Keyword(s):  
Integrated Circuits ◽  
Digital Integrated Circuits ◽  
Computer Aided Analysis ◽  
Computer Aided

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

Complementary transistor technology for use in optoelectronic integrated circuits

1993 ◽  
Vol 140 (4) ◽  
pp. 279
Author(s):  
P.A. Kiely ◽  
G.W. Taylor ◽  
D.P. Docter ◽  
P.A. Evaldsson ◽  
T.A. Vang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Optoelectronic Integrated Circuits

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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