Auger recombination in long-wavelength strained-layer quantum-well structures

1995 ◽  
Vol 31 (5) ◽  
pp. 864-875 ◽  
Author(s):  
Jin Wang ◽  
P. von Allmen ◽  
J.-P. Leburton ◽  
K.J. Linden
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Quantum Well Structures ◽  
Strained Layer ◽  
Long Wavelength

Auger recombination in long-wavelength quantum-well lasers

1984 ◽  
Vol 20 (21) ◽  
pp. 893 ◽  
Author(s):  
C. Smith ◽  
R.A. Abram ◽  
M.G. Burt
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Quantum Well Lasers ◽  
Long Wavelength

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

1993 ◽  
Vol 29 (14) ◽  
pp. 1255 ◽  
Author(s):  
E. Tournié ◽  
P. Grunberg ◽  
C. Fouillant ◽  
S. Kadret ◽  
B. Boissier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Long Wavelength ◽  
Quantum Well Laser ◽  
Inp Substrate

scholarly journals Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well

1999 ◽  
Vol 4 (S1) ◽  
pp. 642-647
Author(s):  
Michael C.Y. Chan ◽  
Kwok-On Tsang ◽  
E. Herbert Li ◽  
Steven P. Denbaars
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Quantum Well ◽  
Thermal Annealing ◽  
Diffusion Coefficients ◽  
Green Light ◽  
Optical Gain ◽  
Quantum Well Structures ◽  
Strained Layer ◽  
Constant Diffusion

Quantum well (QW) material engineering has attracted a considerable amount of interest from many people because of its ability to produce a number of optoelectronic devices. QW composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixing process is an attractive way to achieve the modification of the QW band structure. It is known that the band structure is a fundamental determinant for such electronic and optical properties of materials as the optical gain, the refractive index and the absorption. During the process, the as-grown square-QW compositional profile is modified to a graded profile, thereby altering the confinement profile and the subband structure in the QW. The blue-shifting of the wavelength in the intermixed QW structure is found in this process.In recent years, III-nitride semiconductors have attracted much attention. This is mainly due to their large bandgap range from 1.89eV (wurtzite InN) to 3.44eV (wurtzite GaN). InGaN/GaN quantum well structures have been used to achieve high lumens blue and green light emitting diodes. Such structures also facilitate the production of full colour LED displays by complementing the colour spectrum of available LEDs.In this paper, the effects of thermal annealing on the strained-layer InGaN/GaN QW will be presented. The effects of intermixing on the confinement potential of InGaN/GaN QWs have been theoretically analysed, with sublattices interdiffusion as the basis. This process is described by Fick’s law, with constant diffusion coefficients in both the well and the barrier layers. The diffusion coefficients depend on the annealing temperature, time and the activation energy of constituent atoms. The optical properties of intermixed InGaN/GaN QW structure of different interdiffusion rates have been theoretically analyzed for applications of novel optical devices. The photoluminescence studies and the intermixed QW modeling have been used to understand the effects of intermixing.

Long-wavelength strained-layer quantum-well lasers

1992 ◽  
Author(s):  
Chung-En Zah ◽  
Rajaram J. Bhat ◽  
F. J. Favire ◽  
Bhadresh Pathak ◽  
Catherine Caneau ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Long Wavelength

Cyclotron mass of two‐dimensional holes in strained‐layer GaAs/In0.20Ga0.80As/GaAs quantum well structures

1995 ◽  
Vol 67 (15) ◽  
pp. 2170-2172 ◽  
Author(s):  
Shawn‐Yu Lin ◽  
H. P. Wei ◽  
D. C. Tsui ◽  
J. F. Klem
Keyword(s):  
Quantum Well ◽  
Two Dimensional ◽  
Quantum Well Structures ◽  
Strained Layer ◽  
Cyclotron Mass

Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

2001 ◽  
Vol 29 (2) ◽  
pp. 75-77 ◽  
Author(s):  
T. Piwo?ski ◽  
P. Sajewicz ◽  
J. M. Kubica ◽  
M. Zbroszczyk ◽  
K. Regi?ski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Long Wavelength
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