Scaling of the nonlinear optical cross sections of GaAs-AlGaAs multiple quantum-well hetero n-i-p-i's

1994 ◽  
Vol 30 (12) ◽  
pp. 2790-2797 ◽  
Author(s):  
D.S. McCallum ◽  
A.N. Cartwright ◽  
A.L. Smirl ◽  
W.F. Tseng ◽  
J.G. Pellegrino ◽  
...  
Keyword(s):  
Quantum Well ◽  
Cross Sections ◽  
Nonlinear Optical ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Fast nonlinear optical response from proton‐bombarded multiple quantum well structures

1985 ◽  
Vol 46 (8) ◽  
pp. 701-703 ◽  
Author(s):  
Y. Silberberg ◽  
P. W. Smith ◽  
D. A. B. Miller ◽  
B. Tell ◽  
A. C. Gossard ◽  
...  
Keyword(s):  
Quantum Well ◽  
Nonlinear Optical ◽  
Multiple Quantum Well ◽  
Optical Response ◽  
Nonlinear Optical Response ◽  
Multiple Quantum ◽  
Quantum Well Structures

Depth Profiling of Ion Beam Induced Damage in Semiconductor Heterostructures

1988 ◽  
Vol 128 ◽  
Author(s):  
R. Germann ◽  
A. Forchel ◽  
G. Hörcher ◽  
G. Weimann
Keyword(s):  
Quantum Well ◽  
Cross Sections ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Depth Profiling ◽  
Multiple Quantum ◽  
Etching Technique ◽  
Quantum Well Structures ◽  
Inclination Angles ◽  
Argon Ions

ABSTRACTWe have produced beveled cross-sections of GaAs/GaAlAs multiple quantum well structures with inclination angles of 0.55 minutes of arc with a special ion beam etching technique. The extension of the damage which is induced during the dry etching process can be evaluated directly by a comparison of spatially resolved secondary ion mass spectroscopy and photoluminescence measurements. We observe a thickness of the damaged surface layer between 36 nm for 250 eV Argon ions and 160 nm for 1000 eV Argon ions in a GaAs/GaAlAs multiple quantum well structure.

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