Measurement of carrier escape rates, exciton saturation intensity, and saturation density in electrically biased multiple-quantum-well modulators

1994 ◽  
Vol 30 (2) ◽  
pp. 399-407 ◽  
Author(s):  
T. Sizer ◽  
T.K. Woodward ◽  
U. Keller ◽  
K. Sauer ◽  
T.-H. Chiu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Saturation Density ◽  
Multiple Quantum ◽  
Saturation Intensity ◽  
Carrier Escape

scholarly journals Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

2020 ◽  
Vol 28 (16) ◽  
pp. 23796
Author(s):  
Yi Chao Chow ◽  
Changmin Lee ◽  
Matthew S. Wong ◽  
Yuh-Renn Wu ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Barrier Thickness ◽  
Carrier Escape

Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells

2013 ◽  
Vol 103 (3) ◽  
pp. 033901 ◽  
Author(s):  
Sang-Bae Choi ◽  
Jae-Phil Shim ◽  
Dong-Min Kim ◽  
Hoon-Il Jeong ◽  
Young-Dahl Jho ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Indium Composition ◽  
Carrier Escape

Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz

1992 ◽  
Vol 4 (7) ◽  
pp. 720-723 ◽  
Author(s):  
F. Devaux ◽  
E. Bigan ◽  
A. Ougazzaden ◽  
B. Pierre ◽  
F. Huet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Saturation Intensity

Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells

2014 ◽  
Vol 4 (2) ◽  
pp. 607-613 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Hiromasa Fujii ◽  
Yunpeng Wang ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Collection Efficiency ◽  
Multiple Quantum Well ◽  
Escape Time ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Carrier Collection ◽  
Carrier Escape

Carrier escape time dependence on multiple quantum well structure in InGaAs/In(Ga)AlAs systems

1994 ◽  
Vol 64 (23) ◽  
pp. 3130-3132 ◽  
Author(s):  
H. Uenohara ◽  
R. Takahashi ◽  
Y. Kawamura ◽  
H. Iwamura
Keyword(s):  
Quantum Well ◽  
Time Dependence ◽  
Multiple Quantum Well ◽  
Escape Time ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Carrier Escape

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation
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