Effects of lateral heat and carrier diffusion on thermal runaway of cw DH semiconductor lasers

1993 ◽  
Vol 29 (10) ◽  
pp. 2619-2624 ◽  
Author(s):  
H.H. Lee
Keyword(s):  
Semiconductor Lasers ◽  
Thermal Runaway ◽  
Carrier Diffusion ◽  
Lateral Heat

Condition for no thermal runaway in cw semiconductor lasers

1993 ◽  
Vol 74 (11) ◽  
pp. 6503-6510 ◽  
Author(s):  
Jay S. Yoo ◽  
Sychi Fang ◽  
Hong H. Lee
Keyword(s):  
Semiconductor Lasers ◽  
Thermal Runaway

Reduced lateral carrier diffusion for improved miniature semiconductor lasers

1997 ◽  
Vol 81 (8) ◽  
pp. 3377-3381 ◽  
Author(s):  
T. A. Strand ◽  
B. J. Thibeault ◽  
L. A. Coldren
Keyword(s):  
Semiconductor Lasers ◽  
Carrier Diffusion

The Effect of Carrier-Diffusion on the Mode-Competition in Multimode Semiconductor Lasers.

2006 ◽  
Author(s):  
S. Beri ◽  
M. Yousefi ◽  
P. de Jagher ◽  
M. K. Smit ◽  
D. Lenstra
Keyword(s):  
Semiconductor Lasers ◽  
Mode Competition ◽  
Carrier Diffusion

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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