Kinetic processes in electron beam-excited XeF (C40aA) laser media

1989 ◽  
Vol 25 (4) ◽  
pp. 791-802 ◽  
Author(s):  
W.L. Nighan ◽  
M.C. Fowler
Keyword(s):  
Electron Beam ◽  
Kinetic Processes ◽  
Laser Media

Fluorescence yields and kinetics of electron-beam pumped, halogen laser media

1976 ◽  
Vol 18 (1) ◽  
pp. 119-120 ◽  
Author(s):  
M.V. McCusker ◽  
R.M. Hill ◽  
D.L. Huestis ◽  
D.C. Lorents ◽  
H.H. Nakano
Keyword(s):  
Electron Beam ◽  
Laser Media ◽  
Kinetics Of

Kinetically tailored properties of electron-beam excited XeF(C → A) and XeF(B → X) laser media using an Ar-Kr buffer mixture

1987 ◽  
Vol 23 (2) ◽  
pp. 253-261 ◽  
Author(s):  
W. Nighan ◽  
R. Sauerbrey ◽  
Yunping Zhu ◽  
F. Tittel ◽  
W. Wilson
Keyword(s):  
Electron Beam ◽  
Buffer Mixture ◽  
Laser Media

Characteristics of cold cathode electron beam stabilized CO2laser media

1972 ◽  
Author(s):  
J.F. Holzrichter ◽  
T. Kan ◽  
H.G. Ahlstrom ◽  
G. Inglesakis ◽  
J. Jensen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Cold Cathode ◽  
Laser Media

Kinetic processes of electron beam generated XeF* and Xe2F* excimers

1983 ◽  
Vol 78 (2) ◽  
pp. 735-747 ◽  
Author(s):  
R. Sauerbrey ◽  
W. Walter ◽  
F. K. Tittel ◽  
W. L. Wilson
Keyword(s):  
Electron Beam ◽  
Kinetic Processes

High accuracy interferometric measurements of electron-beam pumped transverse-flow laser media with 10-μsec time resolution

1981 ◽  
Vol 20 (14) ◽  
pp. 2372 ◽  
Author(s):  
N. A. Massie ◽  
J. Hartlove ◽  
D. Jungwirth ◽  
J. Morris
Keyword(s):  
Electron Beam ◽  
Time Resolution ◽  
High Accuracy ◽  
Transverse Flow ◽  
Laser Media

Electron‐Beam‐Controlled Electrical Discharge as a Method of Pumping Large Volumes of CO2 Laser Media at High Pressure

1972 ◽  
Vol 20 (2) ◽  
pp. 56-60 ◽  
Author(s):  
C. A. Fenstermacher ◽  
M. J. Nutter ◽  
W. T. Leland ◽  
K. Boyer
Keyword(s):  
High Pressure ◽  
Electron Beam ◽  
Co2 Laser ◽  
Electrical Discharge ◽  
Laser Media

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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