Generalized blockaded reservoir and quantum-well electron-transfer structures (BRAQWETS): modeling and design considerations for high performance waveguide phase modulators

1992 ◽  
Vol 28 (11) ◽  
pp. 2596-2611 ◽  
Author(s):  
M.K. Chin ◽  
T.Y. Chang ◽  
W.S.C. Chang
Keyword(s):  
Electron Transfer ◽  
Quantum Well ◽  
High Performance ◽  
Design Considerations ◽  
Phase Modulators

Design of high‐performance quantum well electron transfer modulators via self‐consistent modeling

1994 ◽  
Vol 65 (17) ◽  
pp. 2196-2198 ◽  
Author(s):  
Jin Wang ◽  
J. E. Zucker ◽  
J. P. Leburton ◽  
T. Y. Chang ◽  
N. J. Sauer
Keyword(s):  
Electron Transfer ◽  
Quantum Well ◽  
High Performance ◽  
Self Consistent

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

scholarly journals Molecular Engineering for High-Performance Fullerene Broadband Photodetector

2021 ◽  
Author(s):  
Mingming Su ◽  
Yajing Hu ◽  
Ao Yu ◽  
Zhiyao Peng ◽  
Wangtao Long ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Low Temperature ◽  
Electron Acceptor ◽  
Photoinduced Electron Transfer ◽  
High Performance ◽  
Organic Molecules ◽  
Low Cost ◽  
Molecular Engineering ◽  
Temperature Requirement ◽  
High Flexibility

Broadband photodetectors fabricated with organic molecules have the advantages of low cost, high flexibility, easy processing and low-temperature requirement. Fullerene molecules, due to the electron acceptor and photoinduced electron transfer...

High performance In0.15Ga0.85As/Al0.15Ga0.85As quantum well modulation doped FETs

1985 ◽  
Author(s):  
W.T. Masselink ◽  
J. Klem ◽  
T. Henderson ◽  
A. Ketterson ◽  
J.S. Gedymin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance

Highly ordered nanoscale phosphomolybdate-grafted polyaniline/metal hybrid layered structures prepared via secondary sputtering phenomenon as high-performance pseudocapacitor electrodes

2021 ◽  
Author(s):  
Eun Seop Yoon ◽  
Bong Gill Choi ◽  
Hwan-Jin Jeon
Keyword(s):  
Electron Transfer ◽  
Aspect Ratio ◽  
Electrochemical Performance ◽  
High Aspect Ratio ◽  
High Performance ◽  
Electrode Materials ◽  
Rate Capability ◽  
High Specific Capacitance ◽  
High Rate ◽  
Large Area

Abstract The development of energy storage electrode materials is important for enhancing the electrochemical performance of supercapacitors. Despite extensive research on improving electrochemical performance with polymer-based materials, electrode materials with micro/nanostructures are needed for fast and efficient ion and electron transfer. In this work, highly ordered phosphomolybdate (PMoO)-grafted polyaniline (PMoO-PAI) deposited onto Au hole-cylinder nanopillar arrays is developed for high-performance pseudocapacitors. The three-dimensional nanostructured arrays are easily fabricated by secondary sputtering lithography, which has recently gained attention and features a high resolution of 10 nm, a high aspect ratio greater than 20, excellent uniformity/accuracy/precision, and compatibility with large area substrates. These 10nm scale Au nanostructures with a high aspect ratio of ~30 on Au substrates facilitate efficient ion and electron transfer. The resultant PMoO-PAI electrode exhibits outstanding electrochemical performance, including a high specific capacitance of 114 mF/cm2, a high-rate capability of 88%, and excellent long-term stability.

High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

2022 ◽  
Vol 43 (01) ◽  
pp. 110-118
Author(s):  
Cui-cui LIU ◽  
◽  
Nan LIN ◽  
Xiao-yu MA ◽  
Hong-qi JING ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
High Performance ◽  
Semiconductor Laser Diode ◽  
Absorption Window

Design considerations of high-performance narrow-emitter bipolar transistors

1987 ◽  
Vol 8 (4) ◽  
pp. 174-175 ◽  
Author(s):  
D.D. Tang ◽  
Tze-Chiang Chen ◽  
Ching-Te Chuang ◽  
G.P. Li ◽  
J.M.C. Stork ◽  
...  
Keyword(s):  
High Performance ◽  
Bipolar Transistors ◽  
Design Considerations
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