Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers

2000 ◽  
Vol 6 (3) ◽  
pp. 452-461 ◽  
Author(s):  
D.L. Huffaker ◽  
G. Park ◽  
Z. Zou ◽  
O.B. Shchekin ◽  
D.G. Deppe
2017 ◽  
Vol 25 (5) ◽  
pp. 4632 ◽  
Author(s):  
Siming Chen ◽  
Mengya Liao ◽  
Mingchu Tang ◽  
Jiang Wu ◽  
Mickael Martin ◽  
...  

2014 ◽  
Vol 8 (2) ◽  
pp. 20-24 ◽  
Author(s):  
Jiang Wu ◽  
Huiyun Liu ◽  
Mingchu Tang ◽  
Alwyn J. Seeds ◽  
Andrew Lee ◽  
...  

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.


2015 ◽  
Vol 17 (43) ◽  
pp. 29374-29379 ◽  
Author(s):  
Veena Hariharan Iyer ◽  
Anshu Pandey

We discuss approaches that could lead to very low threshold continuous wave quantum dot lasers.


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