InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices

1998 ◽  
Vol 4 (3) ◽  
pp. 483-489 ◽  
Author(s):  
S. Nakamura
Keyword(s):  
Laser Diodes ◽  
Strained Layer ◽  
Strained Layer Superlattices ◽  
Structure Laser ◽  
Multiquantum Well

Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes

1997 ◽  
Vol 70 (5) ◽  
pp. 616-618 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Ultrashort Pulse ◽  
Laser Diodes ◽  
Longitudinal Mode ◽  
Pulse Generation ◽  
Ultrashort Pulse Generation ◽  
Structure Laser ◽  
Multiquantum Well

scholarly journals Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 14-19 ◽  
Author(s):  
Monica Hansen ◽  
Amber C. Abare ◽  
Peter Kozodoy ◽  
Thomas M. Katona ◽  
Michael D. Craven ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices ◽  
Cladding Layers ◽  
Superlattice Period

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

1998 ◽  
Vol 72 (2) ◽  
pp. 211-213 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Strained Layer ◽  
Strained Layer Superlattices

Current spreading in AlGaN:Mg cladding layers of laser structures

2001 ◽  
Vol 693 ◽  
Author(s):  
Stephan Figge ◽  
Tim Böttcher ◽  
Christoph Zellweger ◽  
Marc Ilegems ◽  
Detlef Hommel
Keyword(s):  
Laser Diodes ◽  
Current Spreading ◽  
Strained Layer ◽  
Current Path ◽  
Current Voltage ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices ◽  
Cladding Layers ◽  
Significant Spread ◽  
Mg Doped

AbstractThe consequences of the anisotropic resistance in AlGaN/GaN strained layer superlattices for the operation of laser diodes were studied for structures driven in LED mode. A series of laser structures containing different Mg-doped AlGaN bulk and AlGaN/GaN strained layer superlattice cladding layers was compared to estimate the current spreading in the cladding due to the formation of 2D-hole gases. Current-voltage measurements revealed a significant spread of the current path in the superlattices, whereas no spreading was seen for the bulk cladding. In contrast to this, investigations of the electroluminescence showed no significant differences.

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

1997 ◽  
Vol 36 (Part 2, No. 12A) ◽  
pp. L1568-L1571 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Strained Layer ◽  
Strained Layer Superlattices

Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes

1999 ◽  
Vol 595 ◽  
Author(s):  
Monica Hansen ◽  
Amber C. Abare ◽  
Peter Kozodoy ◽  
Thomas M. Katona ◽  
Michael D. Craven ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices ◽  
Cladding Layers ◽  
Superlattice Period

AbstractAlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

Space-charge effects in type-II strained layer superlattices

1998 ◽  
Vol 184-185 ◽  
pp. 728-731 ◽  
Author(s):  
I.V. Bradley ◽  
J.P. Creasey ◽  
K.P. O'Donnell
Keyword(s):  
Space Charge ◽  
Type Ii ◽  
Space Charge Effects ◽  
Charge Effects ◽  
Strained Layer ◽  
Strained Layer Superlattices
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