A comparative study of strain relaxation effects on the performance of InGaAs quantum-well-based heterojunction phototransistors

1997 ◽  
Vol 3 (3) ◽  
pp. 768-779 ◽  
Author(s):  
M. Ghisoni ◽  
O. Sjolund ◽  
A. Larsson ◽  
J. Thordson ◽  
T. Andersson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Comparative Study ◽  
Strain Relaxation ◽  
Relaxation Effects ◽  
Ingaas Quantum Well

Partial strain relaxation effects on polarization anisotropy of semipolar (112¯2) InGaN/GaN quantum well structures

2013 ◽  
Vol 103 (22) ◽  
pp. 221108 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Dhaneshwar Mishra ◽  
Y. Eugene Pak ◽  
Chang Young Park ◽  
Seung-Hyun Yoo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Polarization Anisotropy ◽  
Quantum Well Structures ◽  
Relaxation Effects

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

scholarly journals 830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence

2017 ◽  
Vol 9 (5) ◽  
pp. 1-8
Author(s):  
Bocang Qiu ◽  
Hai Martin Hu ◽  
Weimin Wang ◽  
James Ho ◽  
Wenbin Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Ingaas Quantum Well
Sign in / Sign up

Export Citation Format

Share Document