Modeling of strained quantum-well lasers with spin-orbit coupling

1995 ◽  
Vol 1 (2) ◽  
pp. 218-229 ◽  
Author(s):  
Chih-Sheng Chang ◽  
Shun Lien Chuang
2010 ◽  
Vol 81 (11) ◽  
Author(s):  
Cheng-Tien Chiang ◽  
Aimo Winkelmann ◽  
Ping Yu ◽  
Jürgen Kirschner ◽  
Jürgen Henk

2011 ◽  
Vol 25 (32) ◽  
pp. 2461-2468
Author(s):  
S. PANDA ◽  
B. K. PANDA

The polaronic corrections to the electron energy and effective mass are calculated taking the Rashba spin-orbit coupling in the compositionally asymmetric single quantum well based on heterostructures of narrow gap semiconductors InGaAs and InAs . The electron interaction with the confined longitudinal optic phonon is considered in the Fröhlich form for calculating the polaron properties. In the weak coupling limit, the polaron properties are enhanced by the Rashba spin-orbit coupling in the asymmetric quantum well.


2011 ◽  
Vol 98 (20) ◽  
pp. 202504 ◽  
Author(s):  
Tae Young Lee ◽  
Joonyeon Chang ◽  
Mark C. Hickey ◽  
Hyun Cheol Koo ◽  
Hyung-jun Kim ◽  
...  

2013 ◽  
Vol 15 (12) ◽  
pp. 125031 ◽  
Author(s):  
Bartosz Slomski ◽  
Gabriel Landolt ◽  
Stefan Muff ◽  
Fabian Meier ◽  
Jürg Osterwalder ◽  
...  

2011 ◽  
Vol 415-417 ◽  
pp. 1988-1991
Author(s):  
Yuan Ming Zhou

We investigate the values of the Rashba spin-orbit coupling parameter α in a gated In0.53Ga0.47As/InP quantum well structure using the k•p formalism. With more positive gate voltage applied, the quantum well potential profile becomes more symmetric and the value of α decreases. The theoretical values of α are much smaller than experimental ones. The discrepancy can be reasonably explained by the neglect of the interface contribution in the k•p formalism and the formation of additional InAsxP1-xand GaxIn1-xAsyP1-yinterfacial layers in our sample.


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