Focused wide-band array processing by spatial resampling

1990 ◽  
Vol 38 (2) ◽  
pp. 356-360 ◽  
Author(s):  
J. Krolik ◽  
D. Swingler
Keyword(s):  
Array Processing ◽  
Wide Band ◽  
Spatial Resampling

On focusing matrices for wide-band array processing

1992 ◽  
Vol 40 (6) ◽  
pp. 1295-1302 ◽  
Author(s):  
M.A. Doron ◽  
A.J. Weiss
Keyword(s):  
Array Processing ◽  
Wide Band ◽  
Focusing Matrices

Seven-colour photometry at the Geneva Observatory

1966 ◽  
Vol 24 ◽  
pp. 262-266 ◽  
Author(s):  
M. Golay
Keyword(s):  
Wide Band ◽  
Electric System ◽  
Band Type

During the last 5 years, we have developed a seven-colour photometry at the Geneva Observatory. Our multicolour photo-electric system is of a wide-band type; the bandwidth being about 500Å for four filters. The three others are similar to theUBVsystem. In Table 1 we give the filter combinations used in our photometry (1).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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