scholarly journals Single event effects in static and dynamic registers in a 0.25 μm CMOS technology

1999 ◽  
Vol 46 (6) ◽  
pp. 1434-1439 ◽  
Author(s):  
F. Faccio ◽  
K. Kloukinas ◽  
A. Marchioro ◽  
T. Calin ◽  
J. Cosculluela ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Single Event ◽  
Single Event Effects

Single Event Effects Sensitivity of the Q Series Advanced CMOS Technology

2006 ◽  
Author(s):  
R. Koga ◽  
J. George ◽  
P. Yu ◽  
S. Crain ◽  
M. Zakrzewski ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Single Event ◽  
Single Event Effects

Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter

2015 ◽  
Vol 36 (11) ◽  
pp. 115010 ◽  
Author(s):  
Anlin He ◽  
Gang Guo ◽  
Shuting Shi ◽  
Dongjun Shen ◽  
Jiancheng Liu ◽  
...  
Keyword(s):  
Experimental Research ◽  
Cmos Technology ◽  
Heavy Ion ◽  
Single Event ◽  
Single Event Effects

Single-Event Effects Characterization of LC-VCO PLLs in a 28-nm CMOS Technology

2020 ◽  
Vol 67 (9) ◽  
pp. 2042-2050
Author(s):  
Zhichao Zhang ◽  
Hormoz Djahanshahi ◽  
Cheng Gu ◽  
Maulik Patel ◽  
Li Chen
Keyword(s):  
Cmos Technology ◽  
Single Event ◽  
Single Event Effects ◽  
28 Nm ◽  
Lc Vco

scholarly journals The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 440
Author(s):  
Yanan Liang ◽  
Rui Chen ◽  
Jianwei Han ◽  
Xuan Wang ◽  
Qian Chen ◽  
...  
Keyword(s):  
Low Voltage ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Track Length ◽  
Single Event ◽  
Single Event Effects ◽  
Heavy Ion Irradiation ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Tcad Simulation

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

scholarly journals Variable Depth Bragg Peak Method for Single Event Effects Testing

2011 ◽  
Vol 58 (6) ◽  
pp. 2976-2982 ◽  
Author(s):  
S. Buchner ◽  
N. Kanyogoro ◽  
D. McMorrow ◽  
C. C. Foster ◽  
Patrick M. O'Neill ◽  
...  
Keyword(s):  
Bragg Peak ◽  
Single Event ◽  
Variable Depth ◽  
Single Event Effects
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