Design and performance of a low-noise, low-power consumption CMOS charge amplifier for capacitive detectors

1998 ◽  
Vol 45 (1) ◽  
pp. 119-123 ◽  
Author(s):  
Y. Hu ◽  
J.L. Solere ◽  
D. Lachartre ◽  
R. Tutchetta
1991 ◽  
Vol 69 (3-4) ◽  
pp. 177-179
Author(s):  
Langis Roy ◽  
Malcolm G. Stubbs ◽  
James S. Wight

The design and performance of a high-gain, monolithic, broadband amplifier with extremely low power consumption are described. The amplifier, fabricated using a 0.5 μm GaAs depletion-mode MESFET (metal semiconductor field effect transistor) process, utilizes very small gate width devices to achieve a measured gain of 19 dB and a 0.1 to 2.1 GHz bandwidth with only 63 mW dc power dissipation. This is the lowest power consumption broadband MMIC (monolithic microwave integrated circuit) reported to date and is intended for mobile radio applications.


2020 ◽  
Vol 97 ◽  
pp. 104723 ◽  
Author(s):  
Debasish Nayak ◽  
Prakash Kumar Rout ◽  
Sudhakar Sahu ◽  
Debiprasad Priyabrata Acharya ◽  
Umakanta Nanda ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document