Photocurrent mapping as a probe of transport properties and electric field distributions in cadmium zinc telluride detectors

1997 ◽  
Vol 44 (4) ◽  
pp. 1684-1691 ◽  
Author(s):  
J.E. Toney ◽  
B.A. Brunett ◽  
T.E. Schlesinger ◽  
R.B. James
Keyword(s):  
Electric Field ◽  
Transport Properties ◽  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Field Distributions ◽  
Cadmium Zinc

Investigation of the internal electric field in cadmium zinc telluride detectors using the Pockels effect and the analysis of charge transients

2010 ◽  
Vol 107 (2) ◽  
pp. 023704 ◽  
Author(s):  
Michael Groza ◽  
Henric Krawczynski ◽  
Alfred Garson ◽  
Jerrad W. Martin ◽  
Kuen Lee ◽  
...  
Keyword(s):  
Electric Field ◽  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Internal Electric Field ◽  
Pockels Effect ◽  
Cadmium Zinc

Mapping of Large Area Cadmium Zinc Telluride (CZT) Wafers: Apparatus and Methods

1997 ◽  
Vol 487 ◽  
Author(s):  
B. A. Brunett ◽  
J. M. Van Scyoc ◽  
H. Yoon ◽  
T. S. Gilbert ◽  
T. E. Schlesinger ◽  
...  
Keyword(s):  
Transport Properties ◽  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Hole Transport ◽  
Device Fabrication ◽  
Great Promise ◽  
Large Area ◽  
Detector Performance ◽  
Cadmium Zinc

AbstractCadmium Zinc Telluride (CZT) shows great promise as a semiconductor radiation detector material. CZT possesses advantageous material properties over other radiation detector materials in use today, such as a high intrinsic resistivity and a high cross-section for x and γ-rays. However, presently available CZT is not without limitations. The hole transport properties severely limit the performance of these detectors, and the yield of material possessing adequate electron transport properties is currently much lower than desired. The result of these material deficiencies is a lack of inexpensive CZT crystals of large volume for several radiation detector applications. One approach to help alleviate this problem is to measure the spatial distribution (or map) the electrical properties of large area CZT wafers prior to device fabrication. This mapping can accomplish two goals: identify regions of the wafers suitable for detector fabrication and correlate the distribution of crystalline defects with the detector performance. The results of this characterization can then be used by the crystal manufacturers to optimize their growth processes. In this work, we discuss the design and performance of apparatus for measuring the electrical characteristics of entire CZT wafers (up to 10 cm × 10 cm). The data acquisition and manipulation will be discussed and some typical data will be presented.

Mapping of Large Area Cadmium Zinc Telluride (CZT) Wafers: Apparatus and Methods

1997 ◽  
Vol 484 ◽  
Author(s):  
B. A. Brunett ◽  
J. M. Van Scyoc ◽  
H. Yoon ◽  
T. S. Gilbert ◽  
T. E. Schlesinger ◽  
...  
Keyword(s):  
Transport Properties ◽  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Hole Transport ◽  
Device Fabrication ◽  
Great Promise ◽  
Large Area ◽  
Detector Performance ◽  
Cadmium Zinc

AbstractCadmium Zinc Telluride (CZT) shows great promise as a semiconductor radiation detector material. CZT possesses advantageous material properties over other radiation detector materials in use today, such as a high intrinsic resistivity and a high cross-section for x and γ-rays. However, presently available CZT is not without limitations. The hole transport properties severely limit the performance of these detectors, and the yield of material possessing adequate electron transport properties is currently much lower than desired. The result of these material deficiencies is a lack of inexpensive CZT crystals of large volume for several radiation detector applications. One approach to help alleviate this problem is to measure the spatial distribution (or map) the electrical properties of large area CZT wafers prior to device fabrication. This mapping can accomplish two goals: identify regions of the wafers suitable for detector fabrication and correlate the distribution of crystalline defects with the detector performance. The results of this characterization can then be used by the crystal manufacturers to optimize their growth processes. In this work, we discuss the design and performance of apparatus for measuring the electrical characteristics of entire CZT wafers (up to 10 cm × 10 cm). The data acquisition and manipulation will be discussed and some typical data will be presented.

Electric field distribution of cadmium zinc telluride (CZT) detectors

2009 ◽  
Author(s):  
G. Yang ◽  
A. E. Bolotnikov ◽  
G. S. Camarda ◽  
Y. Cui ◽  
A. Hossain ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Czt Detectors ◽  
Cadmium Zinc
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